From Si nanotubes to nanowires : Synthesis, characterization, and self-assembly

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • T. Qiu
  • X. L. Wu
  • Y. F. Mei
  • G. J. Wan
  • G. G. Siu

Detail(s)

Original languageEnglish
Pages (from-to)143-148
Journal / PublicationJournal of Crystal Growth
Volume277
Issue number1-4
Publication statusPublished - 15 Apr 2005

Abstract

Through electroless silver deposition, we have successfully fabricated Si nanowires (SiNWs) in a conventional vessel containing aqueous HF and AgNO 3 solution. Their growth mechanisms are analyzed on the basis of a self-assembled localized microscopic electrochemical cell model. A series of scanning electron microscope observations reveal the detailed growth process of the SiNWs. The formation of intermediate Si nanostructures (undetached Si nanotubes) is suggested to be responsible for the growth of triangular shaped SiNWs. The shape and structure of the SiNWs and intermediate undetached Si nanotubes are promising characteristics for applications in interconnection and basic components for future nanoelectronic and optoelectronic devices. © 2005 Elsevier B.V. All rights reserved.

Research Area(s)

  • A1. Nanostructures, A2. Electrochemical growth, B2. Semiconducting silicon

Citation Format(s)

From Si nanotubes to nanowires: Synthesis, characterization, and self-assembly. / Qiu, T.; Wu, X. L.; Mei, Y. F. et al.
In: Journal of Crystal Growth, Vol. 277, No. 1-4, 15.04.2005, p. 143-148.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review