Formation of submicron epitaxial islands of Pd2Si on silicon

C. B. Boothroyd; W. M. Stobbs; K. N. Tu

doi:10.1063/1.98140

Formation of submicron epitaxial islands of Pd₂Si on silicon

C. B. Boothroyd
, W. M. Stobbs
, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

5 Citations (Scopus)

Abstract

It has been found that annealing Pd-Er deposits on a (001) silicon surface results in the formation of isolated submicron islands of Pd₂Si with two epitaxially oriented habits. By contrast, when Pd is annealed on a (111) silicon substrate, Pd₂Si is formed with full coverage and a specific epitaxy.

Original language	English
Pages (from-to)	577-579
Journal	Applied Physics Letters
Volume	50
Issue number	10
DOIs	https://doi.org/10.1063/1.98140
Publication status	Published - 1987
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "Formation of submicron epitaxial islands of Pd2Si on silicon",

abstract = "It has been found that annealing Pd-Er deposits on a (001) silicon surface results in the formation of isolated submicron islands of Pd2Si with two epitaxially oriented habits. By contrast, when Pd is annealed on a (111) silicon substrate, Pd2Si is formed with full coverage and a specific epitaxy.",

author = "Boothroyd, \{C. B.\} and Stobbs, \{W. M.\} and Tu, \{K. N.\}",

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journal = "Applied Physics Letters",

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T1 - Formation of submicron epitaxial islands of Pd2Si on silicon

AU - Boothroyd, C. B.

AU - Stobbs, W. M.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1987

Y1 - 1987

N2 - It has been found that annealing Pd-Er deposits on a (001) silicon surface results in the formation of isolated submicron islands of Pd2Si with two epitaxially oriented habits. By contrast, when Pd is annealed on a (111) silicon substrate, Pd2Si is formed with full coverage and a specific epitaxy.

AB - It has been found that annealing Pd-Er deposits on a (001) silicon surface results in the formation of isolated submicron islands of Pd2Si with two epitaxially oriented habits. By contrast, when Pd is annealed on a (111) silicon substrate, Pd2Si is formed with full coverage and a specific epitaxy.

UR - https://www.scopus.com/pages/publications/0040299887

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0040299887&origin=recordpage

U2 - 10.1063/1.98140

DO - 10.1063/1.98140

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 50

SP - 577

EP - 579

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -