Formation of silicon-on-aluminum nitride using ion-cut and theoretical investigation of self-heating effects

Ming Zhu; Weili Liu; Zhitong Song; Ricky K.Y. Fu; Paul K. Chu; Chenglu Lin

doi:10.1016/j.matlet.2004.10.035

Author(s)

Ming Zhu
Weili Liu
Zhitong Song
Ricky K.Y. Fu
Chenglu Lin

Detail(s)

Original language	English
Pages (from-to)	510-513
Journal / Publication	Materials Letters
Volume	59
Issue number	4
Publication status	Published - Feb 2005

Link(s)

DOI	DOI https://doi.org/10.1016/j.matlet.2004.10.035 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-9944223680&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(04b4f232-a4a4-42fe-bc83-e9122d7ba518).html

Abstract

We propose to replace the buried SiO₂ layer in silicon-on-insulator (SOI) with a plasma-synthesized AlN thin film to mitigate the self-heating penalty. The AlN films synthesized on Si by metal plasma immersion ion implantation-deposition (Me-PIIID) exhibit outstanding surface topography and excellent insulating characteristics. Using direct bonding process and the hydrogen-induced layer transfer method, a silicon-on-AlN (SOAN) structure has been successfully fabricated. Cross-sectional high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) depth profiles and spreading resistance probe (SRP) reveal that a uniform buried AlN layer is under a single crystal Si overlayer. The interfaces between the top Si layer, buried AlN layer, and Si substrate are smooth and sharp. In addition, the new SOAN device has been verified in two-dimensional device simulation and demonstrates that the self-heating penalty of SOI can indeed be reduced using SOAN substrates. © 2004 Elsevier B.V. All rights reserved.

Research Area(s)

AlN, Electronic materials, Plasma immersion ion implantation, Semiconductors, Silicon-on-insulator, Wafer bonding

Citation Format(s)

[ RIS ] [ BibTeX ]

Formation of silicon-on-aluminum nitride using ion-cut and theoretical investigation of self-heating effects. / Zhu, Ming; Liu, Weili; Song, Zhitong et al.
In: Materials Letters, Vol. 59, No. 4, 02.2005, p. 510-513.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Zhu, M, Liu, W, Song, Z, Fu, RKY, Chu, PK & Lin, C 2005, 'Formation of silicon-on-aluminum nitride using ion-cut and theoretical investigation of self-heating effects', Materials Letters, vol. 59, no. 4, pp. 510-513. https://doi.org/10.1016/j.matlet.2004.10.035

Zhu, M., Liu, W., Song, Z., Fu, R. K. Y., Chu, P. K., & Lin, C. (2005). Formation of silicon-on-aluminum nitride using ion-cut and theoretical investigation of self-heating effects. Materials Letters, 59(4), 510-513. https://doi.org/10.1016/j.matlet.2004.10.035

Zhu M, Liu W, Song Z, Fu RKY, Chu PK, Lin C. Formation of silicon-on-aluminum nitride using ion-cut and theoretical investigation of self-heating effects. Materials Letters. 2005 Feb;59(4):510-513. doi: 10.1016/j.matlet.2004.10.035

Zhu, Ming ; Liu, Weili ; Song, Zhitong et al. / Formation of silicon-on-aluminum nitride using ion-cut and theoretical investigation of self-heating effects. In: Materials Letters. 2005 ; Vol. 59, No. 4. pp. 510-513.