Formation of Si-based nano-island array on porous anodic alumina

Y. F. Mei; G. S. Huang; Z. M. Li; G. G. Siu; Ricky K.Y. Fu; Y. M. Yang; X. L. Wu; Z. K. Tang; Paul K. Chu

doi:10.1016/j.actamat.2004.08.024

Formation of Si-based nano-island array on porous anodic alumina

Y. F. Mei, G. S. Huang, Z. M. Li, G. G. Siu, Ricky K.Y. Fu, Y. M. Yang, X. L. Wu, Z. K. Tang, Paul K. Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

13 Citations (Scopus)

Abstract

Si-based nano-island arrays were fabricated on porous anodic alumina by two methods. In the first method, a thick silicon film was first deposited onto the surface with highly ordered bowl array prepared by anodizing an Al foil, followed by the formation of a polycrystalline silicon nano-island array on the surface close to the bowl array after dissolving aluminum. In the second method, porous anodization was performed on an Al thin film on Si and a SiO₂ nano-island array was subsequently formed electrochemically. Time-resolved atomic force microscopy and photoluminescence were used to investigate the growth process as well as the mechanism of the growth process. Our proposed mechanism as well as assumptions made to formulate the model were found to be in agreement with the experimental results. © 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	5633-5637
Journal	Acta Materialia
Volume	52
Issue number	19
DOIs	https://doi.org/10.1016/j.actamat.2004.08.024
Publication status	Published - 8 Nov 2004

Research Keywords

Chemical synthesis
Nanostructures
Semiconductor

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@article{db1974e7826346a183af63c3de6259e7,

title = "Formation of Si-based nano-island array on porous anodic alumina",

abstract = "Si-based nano-island arrays were fabricated on porous anodic alumina by two methods. In the first method, a thick silicon film was first deposited onto the surface with highly ordered bowl array prepared by anodizing an Al foil, followed by the formation of a polycrystalline silicon nano-island array on the surface close to the bowl array after dissolving aluminum. In the second method, porous anodization was performed on an Al thin film on Si and a SiO2 nano-island array was subsequently formed electrochemically. Time-resolved atomic force microscopy and photoluminescence were used to investigate the growth process as well as the mechanism of the growth process. Our proposed mechanism as well as assumptions made to formulate the model were found to be in agreement with the experimental results. {\textcopyright} 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.",

keywords = "Chemical synthesis, Nanostructures, Semiconductor",

author = "Mei, {Y. F.} and Huang, {G. S.} and Li, {Z. M.} and Siu, {G. G.} and Fu, {Ricky K.Y.} and Yang, {Y. M.} and Wu, {X. L.} and Tang, {Z. K.} and Chu, {Paul K.}",

year = "2004",

month = nov,

day = "8",

doi = "10.1016/j.actamat.2004.08.024",

language = "English",

volume = "52",

pages = "5633--5637",

journal = "Acta Materialia",

issn = "1359-6454",

publisher = "Elsevier Ltd.",

number = "19",

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TY - JOUR

T1 - Formation of Si-based nano-island array on porous anodic alumina

AU - Mei, Y. F.

AU - Huang, G. S.

AU - Li, Z. M.

AU - Siu, G. G.

AU - Fu, Ricky K.Y.

AU - Yang, Y. M.

AU - Wu, X. L.

AU - Tang, Z. K.

AU - Chu, Paul K.

PY - 2004/11/8

Y1 - 2004/11/8

N2 - Si-based nano-island arrays were fabricated on porous anodic alumina by two methods. In the first method, a thick silicon film was first deposited onto the surface with highly ordered bowl array prepared by anodizing an Al foil, followed by the formation of a polycrystalline silicon nano-island array on the surface close to the bowl array after dissolving aluminum. In the second method, porous anodization was performed on an Al thin film on Si and a SiO2 nano-island array was subsequently formed electrochemically. Time-resolved atomic force microscopy and photoluminescence were used to investigate the growth process as well as the mechanism of the growth process. Our proposed mechanism as well as assumptions made to formulate the model were found to be in agreement with the experimental results. © 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

AB - Si-based nano-island arrays were fabricated on porous anodic alumina by two methods. In the first method, a thick silicon film was first deposited onto the surface with highly ordered bowl array prepared by anodizing an Al foil, followed by the formation of a polycrystalline silicon nano-island array on the surface close to the bowl array after dissolving aluminum. In the second method, porous anodization was performed on an Al thin film on Si and a SiO2 nano-island array was subsequently formed electrochemically. Time-resolved atomic force microscopy and photoluminescence were used to investigate the growth process as well as the mechanism of the growth process. Our proposed mechanism as well as assumptions made to formulate the model were found to be in agreement with the experimental results. © 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

KW - Chemical synthesis

KW - Nanostructures

KW - Semiconductor

UR - http://www.scopus.com/inward/record.url?scp=5044249095&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-5044249095&origin=recordpage

U2 - 10.1016/j.actamat.2004.08.024

DO - 10.1016/j.actamat.2004.08.024

M3 - RGC 21 - Publication in refereed journal

SN - 1359-6454

VL - 52

SP - 5633

EP - 5637

JO - Acta Materialia

JF - Acta Materialia

IS - 19

ER -

Formation of Si-based nano-island array on porous anodic alumina

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