Formation of shallow Schottky contacts to Si using Pt-Si and Pd-Si alloy films

M. Eizenberg; H. Foell; K. N. Tu

doi:10.1063/1.328850

Author(s)

M. Eizenberg
H. Foell
K. N. Tu

Detail(s)

Original language	English
Pages (from-to)	861-868
Journal / Publication	Journal of Applied Physics
Volume	52
Issue number	2
Publication status	Published - 1981
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.328850 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0019533151&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(1a72626b-db40-4029-b49a-6c2f696579d8).html

Abstract

A series of codeposited alloy films of Pt-Si with a composition changing from Pt₇₅Si₂₅ to Pt₅₀Si₅₀ and of Pd-Si changing from Pd₇₅Si₂₅ to Pd₆₇Si ₃₃ have been prepared on Si for a systematic study of shallow silicide contacts. The effects of alloy composition and heat treatment on the formation and properties of these contacts have been investigated by I-V measurement of Schottky barrier height, glancing incidence x-ray diffraction, and cross-sectional transmission electron microscopy. Shallow contacts with a depth of about 10 nm and with the Schottky barrier height of PtSi and Pd ₂Si have been achieved.

Research Area(s)

SDG 7 - Affordable and Clean Energy

Bibliographic Note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Citation Format(s)

[ RIS ] [ BibTeX ]

Formation of shallow Schottky contacts to Si using Pt-Si and Pd-Si alloy films. / Eizenberg, M.; Foell, H.; Tu, K. N.
In: Journal of Applied Physics, Vol. 52, No. 2, 1981, p. 861-868.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Eizenberg, M, Foell, H & Tu, KN 1981, 'Formation of shallow Schottky contacts to Si using Pt-Si and Pd-Si alloy films', Journal of Applied Physics, vol. 52, no. 2, pp. 861-868. https://doi.org/10.1063/1.328850

Eizenberg, M., Foell, H., & Tu, K. N. (1981). Formation of shallow Schottky contacts to Si using Pt-Si and Pd-Si alloy films. Journal of Applied Physics, 52(2), 861-868. https://doi.org/10.1063/1.328850

Eizenberg M, Foell H, Tu KN. Formation of shallow Schottky contacts to Si using Pt-Si and Pd-Si alloy films. Journal of Applied Physics. 1981;52(2):861-868. doi: 10.1063/1.328850

Eizenberg, M. ; Foell, H. ; Tu, K. N. / Formation of shallow Schottky contacts to Si using Pt-Si and Pd-Si alloy films. In: Journal of Applied Physics. 1981 ; Vol. 52, No. 2. pp. 861-868.