Formation of shallow Schottky contacts to Si using Pt-Si and Pd-Si alloy films

M. Eizenberg; H. Foell; K. N. Tu

doi:10.1063/1.328850

Formation of shallow Schottky contacts to Si using Pt-Si and Pd-Si alloy films

M. Eizenberg, H. Foell, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

37 Citations (Scopus)

Abstract

A series of codeposited alloy films of Pt-Si with a composition changing from Pt₇₅Si₂₅ to Pt₅₀Si₅₀ and of Pd-Si changing from Pd₇₅Si₂₅ to Pd₆₇Si ₃₃ have been prepared on Si for a systematic study of shallow silicide contacts. The effects of alloy composition and heat treatment on the formation and properties of these contacts have been investigated by I-V measurement of Schottky barrier height, glancing incidence x-ray diffraction, and cross-sectional transmission electron microscopy. Shallow contacts with a depth of about 10 nm and with the Schottky barrier height of PtSi and Pd ₂Si have been achieved.

Original language	English
Pages (from-to)	861-868
Journal	Journal of Applied Physics
Volume	52
Issue number	2
DOIs	https://doi.org/10.1063/1.328850
Publication status	Published - 1981
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "Formation of shallow Schottky contacts to Si using Pt-Si and Pd-Si alloy films",

abstract = "A series of codeposited alloy films of Pt-Si with a composition changing from Pt75Si25 to Pt50Si50 and of Pd-Si changing from Pd75Si25 to Pd67Si 33 have been prepared on Si for a systematic study of shallow silicide contacts. The effects of alloy composition and heat treatment on the formation and properties of these contacts have been investigated by I-V measurement of Schottky barrier height, glancing incidence x-ray diffraction, and cross-sectional transmission electron microscopy. Shallow contacts with a depth of about 10 nm and with the Schottky barrier height of PtSi and Pd 2Si have been achieved.",

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AU - Eizenberg, M.

AU - Foell, H.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1981

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N2 - A series of codeposited alloy films of Pt-Si with a composition changing from Pt75Si25 to Pt50Si50 and of Pd-Si changing from Pd75Si25 to Pd67Si 33 have been prepared on Si for a systematic study of shallow silicide contacts. The effects of alloy composition and heat treatment on the formation and properties of these contacts have been investigated by I-V measurement of Schottky barrier height, glancing incidence x-ray diffraction, and cross-sectional transmission electron microscopy. Shallow contacts with a depth of about 10 nm and with the Schottky barrier height of PtSi and Pd 2Si have been achieved.

AB - A series of codeposited alloy films of Pt-Si with a composition changing from Pt75Si25 to Pt50Si50 and of Pd-Si changing from Pd75Si25 to Pd67Si 33 have been prepared on Si for a systematic study of shallow silicide contacts. The effects of alloy composition and heat treatment on the formation and properties of these contacts have been investigated by I-V measurement of Schottky barrier height, glancing incidence x-ray diffraction, and cross-sectional transmission electron microscopy. Shallow contacts with a depth of about 10 nm and with the Schottky barrier height of PtSi and Pd 2Si have been achieved.

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DO - 10.1063/1.328850

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Formation of shallow Schottky contacts to Si using Pt-Si and Pd-Si alloy films

Abstract

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