Formation of Head/Tail-to-Body Charged Domain Walls by Mechanical Stress

Qianwei Huang; Jiyuan Yang; Zibin Chen; Yujie Chen; Matthew J. Cabral; Haosu Luo; Fei Li; Shujun Zhang; Yulan Li; Zonghan Xie; Houbing Huang; Yiu-Wing Mai; Simon P. Ringer; Shi Liu; Xiaozhou Liao

doi:10.1021/acsami.2c14598

Formation of Head/Tail-to-Body Charged Domain Walls by Mechanical Stress

Qianwei Huang
, Jiyuan Yang
, Zibin Chen^*
, Yujie Chen
, Matthew J. Cabral
, Haosu Luo
, Fei Li
, Shujun Zhang
, Yulan Li
, Zonghan Xie
, Houbing Huang
, Yiu-Wing Mai
, Simon P. Ringer
, Shi Liu^*
, Xiaozhou Liao^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

7 Citations (Scopus)

Abstract

Domain walls (DWs) in ferroelectric materials are interfaces that separate domains with different polarizations. Charged domain walls (CDWs) and neutral domain walls are commonly classified depending on the charge state at the DWs. CDWs are particularly attractive as they are configurable elements, which can enhance field susceptibility and enable functionalities such as conductance control. However, it is difficult to achieve CDWs in practice. Here, we demonstrate that applying mechanical stress is a robust and reproducible approach to generate CDWs. By mechanical compression, CDWs with a head/tail-to-body configuration were introduced in ultrathin BaTiO₃, which was revealed by in-situ transmission electron microscopy. Finite element analysis shows strong strain fluctuation in ultrathin BaTiO₃ under compressive mechanical stress. Molecular dynamics simulations suggest that the strain fluctuation is a critical factor in forming CDWs. This study provides insight into ferroelectric DWs and opens a pathway to creating CDWs in ferroelectric materials. © 2022 American Chemical Society.

Original language	English
Pages (from-to)	2313-2318
Journal	ACS Applied Materials and Interfaces
Volume	15
Issue number	1
Online published	19 Dec 2022
DOIs	https://doi.org/10.1021/acsami.2c14598
Publication status	Published - 11 Jan 2023
Externally published	Yes

Funding

The authors acknowledge the facilities and the scientific and technical assistance of the Microscopy Australia node at the University of Sydney (Sydney Microscopy & Microanalysis). The authors acknowledge the financial support from the Australian Research Council Discovery Project DP190101155. J.Y. and S.L. acknowledge the supports from Westlake Foundation. The computational resource is provided by Westlake University Supercomputer Center. Z.C. acknowledges the financial support from the Research Office (Project code: P0039581 and P0042733) of The Hong Kong Polytechnic University.

Research Keywords

charged domain walls
domain switching
ferroelectric
strain gradient
transmission electron microscopy

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title = "Formation of Head/Tail-to-Body Charged Domain Walls by Mechanical Stress",

abstract = "Domain walls (DWs) in ferroelectric materials are interfaces that separate domains with different polarizations. Charged domain walls (CDWs) and neutral domain walls are commonly classified depending on the charge state at the DWs. CDWs are particularly attractive as they are configurable elements, which can enhance field susceptibility and enable functionalities such as conductance control. However, it is difficult to achieve CDWs in practice. Here, we demonstrate that applying mechanical stress is a robust and reproducible approach to generate CDWs. By mechanical compression, CDWs with a head/tail-to-body configuration were introduced in ultrathin BaTiO3, which was revealed by in-situ transmission electron microscopy. Finite element analysis shows strong strain fluctuation in ultrathin BaTiO3 under compressive mechanical stress. Molecular dynamics simulations suggest that the strain fluctuation is a critical factor in forming CDWs. This study provides insight into ferroelectric DWs and opens a pathway to creating CDWs in ferroelectric materials. {\textcopyright} 2022 American Chemical Society.",

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author = "Qianwei Huang and Jiyuan Yang and Zibin Chen and Yujie Chen and Cabral, \{Matthew J.\} and Haosu Luo and Fei Li and Shujun Zhang and Yulan Li and Zonghan Xie and Houbing Huang and Yiu-Wing Mai and Ringer, \{Simon P.\} and Shi Liu and Xiaozhou Liao",

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TY - JOUR

T1 - Formation of Head/Tail-to-Body Charged Domain Walls by Mechanical Stress

AU - Huang, Qianwei

AU - Yang, Jiyuan

AU - Chen, Zibin

AU - Chen, Yujie

AU - Cabral, Matthew J.

AU - Luo, Haosu

AU - Li, Fei

AU - Zhang, Shujun

AU - Li, Yulan

AU - Xie, Zonghan

AU - Huang, Houbing

AU - Mai, Yiu-Wing

AU - Ringer, Simon P.

AU - Liu, Shi

AU - Liao, Xiaozhou

PY - 2023/1/11

Y1 - 2023/1/11

N2 - Domain walls (DWs) in ferroelectric materials are interfaces that separate domains with different polarizations. Charged domain walls (CDWs) and neutral domain walls are commonly classified depending on the charge state at the DWs. CDWs are particularly attractive as they are configurable elements, which can enhance field susceptibility and enable functionalities such as conductance control. However, it is difficult to achieve CDWs in practice. Here, we demonstrate that applying mechanical stress is a robust and reproducible approach to generate CDWs. By mechanical compression, CDWs with a head/tail-to-body configuration were introduced in ultrathin BaTiO3, which was revealed by in-situ transmission electron microscopy. Finite element analysis shows strong strain fluctuation in ultrathin BaTiO3 under compressive mechanical stress. Molecular dynamics simulations suggest that the strain fluctuation is a critical factor in forming CDWs. This study provides insight into ferroelectric DWs and opens a pathway to creating CDWs in ferroelectric materials. © 2022 American Chemical Society.

AB - Domain walls (DWs) in ferroelectric materials are interfaces that separate domains with different polarizations. Charged domain walls (CDWs) and neutral domain walls are commonly classified depending on the charge state at the DWs. CDWs are particularly attractive as they are configurable elements, which can enhance field susceptibility and enable functionalities such as conductance control. However, it is difficult to achieve CDWs in practice. Here, we demonstrate that applying mechanical stress is a robust and reproducible approach to generate CDWs. By mechanical compression, CDWs with a head/tail-to-body configuration were introduced in ultrathin BaTiO3, which was revealed by in-situ transmission electron microscopy. Finite element analysis shows strong strain fluctuation in ultrathin BaTiO3 under compressive mechanical stress. Molecular dynamics simulations suggest that the strain fluctuation is a critical factor in forming CDWs. This study provides insight into ferroelectric DWs and opens a pathway to creating CDWs in ferroelectric materials. © 2022 American Chemical Society.

KW - charged domain walls

KW - domain switching

KW - ferroelectric

KW - strain gradient

KW - transmission electron microscopy

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JO - ACS Applied Materials and Interfaces

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ER -

Formation of Head/Tail-to-Body Charged Domain Walls by Mechanical Stress

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