Formation of crystalline diamond by ion beam deposition
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
Original language | English |
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Pages (from-to) | 174-179 |
Journal / Publication | Journal of Non-Crystalline Solids |
Volume | 254 |
Issue number | 1-3 |
Publication status | Published - Sept 1999 |
Conference
Title | Proceedings of the 1998 2nd International Conference on Amorphous and Crystalline Insulating Thin Films II |
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City | Hong Kong, China |
Period | 12 - 14 October 1998 |
Link(s)
Abstract
Direct ion beam deposition was used to study the effect of ion bombardment on the formation of carbon films. Amorphous carbon films were deposited on mirror-polished (0 0 1) silicon substrates by means of a low-energy ion beam of Ar/H2/CH4. High-resolution transmission electron microscopy, field emission scanning electron microscopy and micro-Raman microscopy were used to determine some of the properties of the samples. We found that the amorphous carbon film condensed to form clusters and the surface roughness of the film increased with increasing the ion dose. At ion doses approximately 1019/cm2, crystalline diamond particles with sizes of 15-30 nm were formed in the matrix of amorphous carbon films. The formation of crystalline diamond particles may be due to the ion bombardment induced stress and energy fluctuation.
Citation Format(s)
Formation of crystalline diamond by ion beam deposition. / Sun, X. S.; Zhang, W. J.; Wang, N. et al.
In: Journal of Non-Crystalline Solids, Vol. 254, No. 1-3, 09.1999, p. 174-179.
In: Journal of Non-Crystalline Solids, Vol. 254, No. 1-3, 09.1999, p. 174-179.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review