Formation of buried porous silicon structure by hydrogen plasma immersion ion implantation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal

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Original languageEnglish
Pages (from-to)427-430
Journal / PublicationMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1997


Title1996 MRS Fall Meeting
PlaceUnited States
Period2 - 6 December 1996


Plasma Immersion Ion Implantation (PIII) excels in several areas over conventional ion implantation, for example, higher dose, shorter implantation time, and lower overall cost. The technique can be used to fabricate buried porous silicon. In our experiment, hydrogen is implanted into Si by PIII at 5-30kV to form underlying porous silicon (PS) which emits light at an energy higher than the Si bandgap. The optical properties of the PS samples as measured by photoluminescence are quite good. The PIII technique therefore offers an alternative means to fabricate buried porous silicon structures which can potentially be used to fabricate optoelectronic devices in silicon.