Formation mechanism of wide stacking faults in nanocrystalline Al

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • X. Z. Liao
  • S. G. Srinivasan
  • Y. H. Zhao
  • M. I. Baskes
  • F. Zhou
  • E. J. Lavernia
  • H. F. Xu

Detail(s)

Original languageEnglish
Pages (from-to)3564-3566
Journal / PublicationApplied Physics Letters
Volume84
Issue number18
Online published20 Apr 2004
Publication statusPublished - 3 May 2004
Externally publishedYes

Abstract

A full dislocation often dissociates into two partial dislocations enclosing a stacking fault SF ribbon. The SF width significantly affects the mechanical behavior of metals. Al has very high stacking fault energy and, consequently, very narrow SF width in its coarse-grained state. We have found that some SFs in nanocrystalline Al are surprisingly 1.4–6.8 nm wide, which is 1.5–11 times higher than the reported experimental value in single crystal Al. Our analytical model shows that such wide SFs are formed due to the small grain size and possibly also to the interaction of SF ribbons with high density of dislocations.

Citation Format(s)

Formation mechanism of wide stacking faults in nanocrystalline Al. / Liao, X. Z.; Srinivasan, S. G.; Zhao, Y. H. et al.

In: Applied Physics Letters, Vol. 84, No. 18, 03.05.2004, p. 3564-3566.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review