Formation mechanism of light-emitting porous silicon prepared by reactive ions etching

P. G. Han; Hei Wong; Andy H. P. Chan; M. C. Poon

doi:10.1109/HKEDM.2001.946908

Formation mechanism of light-emitting porous silicon prepared by reactive ions etching

P. G. Han
, Hei Wong
, Andy H. P. Chan
, M. C. Poon

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

2 Citations (Scopus)

Abstract

Porous silicon (PS) offers many potential advantages for the realization of optoelectronic applications. However the electrochemically anodizing method used to fabricate porous silicon has resulted in many undesirable sub-effects, such as impurities due to reactive residents, non-stabilized surface, non-uniform pore structure, high film stress. It contaminates the conventional VLSI processes. In this paper, we report a new dry etching method to produce the light-emitting PS. Formation mechanism of this film is proposed. Using the samples prepared with this new method, our results demonstrate that the luminescence in this film does not have strong correlation with size of the nano-structures and we therefore suggest that the luminescence in this film is not due to the quantum confinement effects. © 2001 IEEE

Original language	English
Title of host publication	Proceedings 2001 IEEE Hong Kong Electron Devices Meeting
Publisher	IEEE
Pages	13-16
ISBN (Print)	0-7803-6714-6
DOIs	https://doi.org/10.1109/HKEDM.2001.946908
Publication status	Published - Jun 2001
Event	2001 IEEE Hong Kong Electron Devices Meeting - Hong Kong, China Duration: 30 Jun 2001 → 30 Jun 2001

Conference

Conference	2001 IEEE Hong Kong Electron Devices Meeting
Place	China
City	Hong Kong
Period	30/06/01 → 30/06/01

Research Keywords

Optoelectronic device
Porous silicon
Reactive ions etching

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10.1109/HKEDM.2001.946908

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Cite this

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title = "Formation mechanism of light-emitting porous silicon prepared by reactive ions etching",

abstract = "Porous silicon (PS) offers many potential advantages for the realization of optoelectronic applications. However the electrochemically anodizing method used to fabricate porous silicon has resulted in many undesirable sub-effects, such as impurities due to reactive residents, non-stabilized surface, non-uniform pore structure, high film stress. It contaminates the conventional VLSI processes. In this paper, we report a new dry etching method to produce the light-emitting PS. Formation mechanism of this film is proposed. Using the samples prepared with this new method, our results demonstrate that the luminescence in this film does not have strong correlation with size of the nano-structures and we therefore suggest that the luminescence in this film is not due to the quantum confinement effects. {\textcopyright} 2001 IEEE",

keywords = "Optoelectronic device, Porous silicon, Reactive ions etching",

author = "Han, \{P. G.\} and Hei Wong and Chan, \{Andy H. P.\} and Poon, \{M. C.\}",

year = "2001",

month = jun,

doi = "10.1109/HKEDM.2001.946908",

language = "English",

isbn = "0-7803-6714-6",

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booktitle = "Proceedings 2001 IEEE Hong Kong Electron Devices Meeting",

publisher = "IEEE",

address = "United States",

note = "2001 IEEE Hong Kong Electron Devices Meeting ; Conference date: 30-06-2001 Through 30-06-2001",

}

TY - GEN

T1 - Formation mechanism of light-emitting porous silicon prepared by reactive ions etching

AU - Han, P. G.

AU - Wong, Hei

AU - Chan, Andy H. P.

AU - Poon, M. C.

PY - 2001/6

Y1 - 2001/6

N2 - Porous silicon (PS) offers many potential advantages for the realization of optoelectronic applications. However the electrochemically anodizing method used to fabricate porous silicon has resulted in many undesirable sub-effects, such as impurities due to reactive residents, non-stabilized surface, non-uniform pore structure, high film stress. It contaminates the conventional VLSI processes. In this paper, we report a new dry etching method to produce the light-emitting PS. Formation mechanism of this film is proposed. Using the samples prepared with this new method, our results demonstrate that the luminescence in this film does not have strong correlation with size of the nano-structures and we therefore suggest that the luminescence in this film is not due to the quantum confinement effects. © 2001 IEEE

AB - Porous silicon (PS) offers many potential advantages for the realization of optoelectronic applications. However the electrochemically anodizing method used to fabricate porous silicon has resulted in many undesirable sub-effects, such as impurities due to reactive residents, non-stabilized surface, non-uniform pore structure, high film stress. It contaminates the conventional VLSI processes. In this paper, we report a new dry etching method to produce the light-emitting PS. Formation mechanism of this film is proposed. Using the samples prepared with this new method, our results demonstrate that the luminescence in this film does not have strong correlation with size of the nano-structures and we therefore suggest that the luminescence in this film is not due to the quantum confinement effects. © 2001 IEEE

KW - Optoelectronic device

KW - Porous silicon

KW - Reactive ions etching

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U2 - 10.1109/HKEDM.2001.946908

DO - 10.1109/HKEDM.2001.946908

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0-7803-6714-6

SP - 13

EP - 16

BT - Proceedings 2001 IEEE Hong Kong Electron Devices Meeting

PB - IEEE

T2 - 2001 IEEE Hong Kong Electron Devices Meeting

Y2 - 30 June 2001 through 30 June 2001

ER -

Formation mechanism of light-emitting porous silicon prepared by reactive ions etching

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