Fluorinated aminoalkoxide CuII complexes : New CVD precursors for deposition of copper metal

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Peng-Fu Hsu
  • Chao-Shiuan Liu
  • Wei-Li Ching
  • Tsung-Yi Chou
  • Arthur J. Carty
  • Shie-Ming Peng
  • Gene-Hsiang Lee
  • Shiow-Huey Chuang

Detail(s)

Original languageEnglish
Pages (from-to)3541-3550
Journal / PublicationJournal of Materials Chemistry
Volume12
Issue number12
Online published27 Sep 2002
Publication statusPublished - 2002
Externally publishedYes

Abstract

Volatile low-melting CuII metal complexes of formula Cu[OC(CF3)R1CH2NHR2]2 (R1 = CF3 or CH3; R2 = CH2CH2OMe, Bui, or But) and Cu[OC(CF3)R1CH2NMe2]2 (R1 = CF3 or CH3) have been synthesized and characterized by spectroscopic methods. A single-crystal X-ray diffraction study on CU[OC(CF3)2CH2NHCH2CH 2OMe]2 shows that one methoxyethyl group of the aminoalkoxide ligand forms an intramolecular dative bond to the Cu atom to produce a square-pyramidal geometry at the metal center, while the second is linked to the Cu atom of the adjacent molecule, giving an N2O4 octahedral coordination arrangement. For the second Bui-substituted complex, Cu[OC(CF3)2CH2NHBui]2, the X-ray structural analysis demonstrated an N2O2 square-planar geometry, with one alkoxide oxygen atom forming strong H-bonding to an adjacent water molecule. Metal CVD experiments were carried out, showing that the source reagents Cu[OC(CF3)2CH2NHBui]2, Cu[OC(CF3)2CH2NHBut]2, and Cu[OCMe(CF3)CH2NHBui]2, which possess a secondary amino group, are capable of depositing copper metal at temperatures of 250-300 °C under inert Ar carrier gas, while Cu[OCMe(CF3)CH2NMe2]2, with a tertiary amine group, requires the use of reductive H2 carrier gas to induce metal deposition at lower temperatures.

Citation Format(s)

Fluorinated aminoalkoxide CuII complexes : New CVD precursors for deposition of copper metal. / Chi, Yun; Hsu, Peng-Fu; Liu, Chao-Shiuan; Ching, Wei-Li; Chou, Tsung-Yi; Carty, Arthur J.; Peng, Shie-Ming; Lee, Gene-Hsiang; Chuang, Shiow-Huey.

In: Journal of Materials Chemistry, Vol. 12, No. 12, 2002, p. 3541-3550.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review