Flexible organic/inorganic heterojunction transistors with low operating voltage

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

12 Scopus Citations
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Author(s)

  • Ye Zhou
  • Su-Ting Han
  • Li Zhou
  • Yan Yan
  • Long-Biao Huang
  • Jing Huang

Detail(s)

Original languageEnglish
Pages (from-to)7073-7080
Journal / PublicationJournal of Materials Chemistry C
Volume1
Issue number42
Publication statusPublished - 14 Nov 2013

Abstract

Solution processed organic/inorganic bilayers have been adopted for ambipolar transistors on flexible substrates. By interface engineering, a balanced hole and electron transport is achieved with low voltage operation for poly(3-hexylthiophene) (P3HT)/ZnO bilayers. Atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXRD), UV-visible absorption spectroscopy and steady-state photoluminescence (PL) spectroscopy are used to analyze the heterostructure film. The ambipolar transistors were relatively stable under various light illuminations and exhibited high mechanical flexibility. The findings provide a better understanding of tunable electrical performance of the organic/inorganic heterojunction and demonstrate their potential application for low voltage electronic devices. © 2013 The Royal Society of Chemistry.

Citation Format(s)

Flexible organic/inorganic heterojunction transistors with low operating voltage. / Zhou, Ye; Han, Su-Ting; Zhou, Li; Yan, Yan; Huang, Long-Biao; Huang, Jing; Roy, V. A L.

In: Journal of Materials Chemistry C, Vol. 1, No. 42, 14.11.2013, p. 7073-7080.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal