TY - JOUR
T1 - Flexible Memristor Constructed by 2D Cadmium Phosphorus Trichalcogenide for Artificial Synapse and Logic Operation
AU - Peng, Zehui
AU - Cheng, Ziqiang
AU - Ke, Shanwu
AU - Xiao, Yongyue
AU - Ye, Zhaoer
AU - Wang, Zikun
AU - Shi, Tongyu
AU - Ye, Cong
AU - Wen, Xin
AU - Chu, Paul K.
AU - Yu, Xue-Feng
AU - Wang, Jiahong
PY - 2023/2/23
Y1 - 2023/2/23
N2 - The development of advanced microelectronics requires new device architecture and multi-functionality. Low-dimensional material is considered as a powerful candidate to construct new devices. In this work, a flexible memristor is fabricated utilizing 2D cadmium phosphorus trichalcogenide nanosheets as the functional layer. The memristor exhibits excellent resistive switching performance under different radius and over 103 bending times. The device mechanism is systematically investigated, and the synaptic plasticity including paired-pulse facilitation and spiking timing-dependent plasticity are further observed. Furthermore, based on the linearly conductance modulation capacity of the flexible memristor, the applications on decimal operation are explored, that the addition, subtraction, multiplication, and division of decimal calculation are successfully achieved. These results demonstrate the potential of metal phosphorus trichalcogenide in novel flexible neuromorphic devices, which accelerate the application process of neuromorphic computing.
AB - The development of advanced microelectronics requires new device architecture and multi-functionality. Low-dimensional material is considered as a powerful candidate to construct new devices. In this work, a flexible memristor is fabricated utilizing 2D cadmium phosphorus trichalcogenide nanosheets as the functional layer. The memristor exhibits excellent resistive switching performance under different radius and over 103 bending times. The device mechanism is systematically investigated, and the synaptic plasticity including paired-pulse facilitation and spiking timing-dependent plasticity are further observed. Furthermore, based on the linearly conductance modulation capacity of the flexible memristor, the applications on decimal operation are explored, that the addition, subtraction, multiplication, and division of decimal calculation are successfully achieved. These results demonstrate the potential of metal phosphorus trichalcogenide in novel flexible neuromorphic devices, which accelerate the application process of neuromorphic computing.
KW - artificial synapses
KW - decimal arithmetic operation
KW - flexible memristors
KW - transition-metal phosphorus trichalcogenide
KW - two-dimensional materials
KW - PHASE-TRANSITION
KW - CONDUCTIVITY
KW - PLASTICITY
KW - SOFT
UR - http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000903685300001
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85145219939&origin=recordpage
UR - http://www.scopus.com/inward/record.url?scp=85145219939&partnerID=8YFLogxK
U2 - 10.1002/adfm.202211269
DO - 10.1002/adfm.202211269
M3 - RGC 21 - Publication in refereed journal
SN - 1616-301X
VL - 33
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 9
M1 - 2211269
ER -