Flat-band voltage shift in metal-gate/high-k/Si stacks

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • An-Ping Huang
  • Xiao-Hu Zheng
  • Zhi-Song Xiao
  • Zhi-Chao Yang
  • Mei Wang
  • Xiao-Dong Yang

Detail(s)

Original languageEnglish
Article number97303
Journal / PublicationChinese Physics B
Volume20
Issue number9
Publication statusPublished - Sept 2011

Abstract

In metal-gate/high-k stacks adopted by the 45 nm technology node, the flat-band voltage (Vfb) shift remains one of the most critical challenges, particularly the flat-band voltage roll-off (Vfb roll-off) phenomenon in p-channel metal-oxide-semiconductor (pMOS) devices with an ultrathin oxide layer. In this paper, recent progress on the investigation of the Vfb shift and the origin of the Vfb roll-off in the metal-gate/high-k pMOS stacks are reviewed. Methods that can alleviate the Vfb shift phenomenon are summarized and the future research trend is described. © 2011 Chinese Physical Society and IOP Publishing Ltd.

Research Area(s)

  • flat-band voltage shift, high-k dielectrics, metal gate, Vfb roll-off

Citation Format(s)

Flat-band voltage shift in metal-gate/high-k/Si stacks. / Huang, An-Ping; Zheng, Xiao-Hu; Xiao, Zhi-Song et al.
In: Chinese Physics B, Vol. 20, No. 9, 97303, 09.2011.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review