Flash memory based on solution processed hafnium dioxide charge trapping layer

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Original languageEnglish
Pages (from-to)4233-4238
Journal / PublicationJournal of Materials Chemistry C
Issue number21
Online published21 Mar 2014
Publication statusPublished - 7 Jun 2014


Hafnium dioxide (HfO2) film prepared by the sol-gel technique has been used as a charge trapping layer in organic flash memory. The thickness, crystallinity and morphology of HfO2 fabricated under various conditions were investigated. X-ray diffraction (XRD) patterns indicated the formation of monoclinic HfO2 crystals with increasing annealing temperature. Atomic force microscopy (AFM) images showed relatively smooth films of HfO2 growth. The annealing temperature-dependent effects on the memory window as well as data retention properties have been discussed. A large memory window and long data retention time have been achieved for the pentacene-based flash memory. The results demonstrate that solution processed HfO2 film could be a promising candidate as a charge trapping layer in printable flash memory. © 2014 the Partner Organisations.