Abstract
The excitonic fine structure, including splitting due to direct and exchange interactions, has experimentally been resolved from silicon nanocrystals and from silicon nanorods. We have found the hierarchy of levels for silicon nanorods to be different from that of silicon nanocrystals with the slower semidark state located above the faster semibright state. The results are analyzed in terms of spin and orbital selection rules indicating that the dimensionality of the exciton determines the relative contribution of the direct Coulomb and the exchange interactions in these nanostructures. © 2009 The American Physical Society.
| Original language | English |
|---|---|
| Article number | 125306 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 79 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 3 Mar 2009 |
Publisher's Copyright Statement
- COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: Dovrat, M., Shalibo, Y., Arad, N., Popov, I., Lee, S. T., & Sa'Ar, A. (2009). Fine structure and selection rules for excitonic transitions in silicon nanostructures. Physical Review B - Condensed Matter and Materials Physics, 79(12), [125306]. https://doi.org/10.1103/PhysRevB.79.125306. The copyright of this article is owned by American Physical Society.
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