Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • K. W. Wong
  • X. T. Zhou
  • Frederick C. K. Au
  • H. L. Lai
  • S. T. Lee

Detail(s)

Original languageEnglish
Pages (from-to)2918-2920
Journal / PublicationApplied Physics Letters
Volume75
Issue number19
Publication statusPublished - 8 Nov 1999

Abstract

Silicon carbide (SiC) nanowires on a silicon substrate were prepared using hot-filament-assisted chemical-vapor deposition with a solid silicon and carbon source. The SiC nanowires show good field-emitting properties as revealed by the current-voltage characteristics. Together with its ease of preparation, these SiC nanowires are shown to have great potential in the area of electron field-emitting devices. © 1999 American Institute of Physics.

Citation Format(s)

Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition. / Wong, K. W.; Zhou, X. T.; Au, Frederick C. K. et al.
In: Applied Physics Letters, Vol. 75, No. 19, 08.11.1999, p. 2918-2920.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review