Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
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Detail(s)
Original language | English |
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Pages (from-to) | 2918-2920 |
Journal / Publication | Applied Physics Letters |
Volume | 75 |
Issue number | 19 |
Publication status | Published - 8 Nov 1999 |
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Abstract
Silicon carbide (SiC) nanowires on a silicon substrate were prepared using hot-filament-assisted chemical-vapor deposition with a solid silicon and carbon source. The SiC nanowires show good field-emitting properties as revealed by the current-voltage characteristics. Together with its ease of preparation, these SiC nanowires are shown to have great potential in the area of electron field-emitting devices. © 1999 American Institute of Physics.
Citation Format(s)
Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition. / Wong, K. W.; Zhou, X. T.; Au, Frederick C. K. et al.
In: Applied Physics Letters, Vol. 75, No. 19, 08.11.1999, p. 2918-2920.
In: Applied Physics Letters, Vol. 75, No. 19, 08.11.1999, p. 2918-2920.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review