Field emission from Ni-disilicide nanorods formed by using implantation of Ni in Si coupled with laser annealing

We report on the formation of Ni-disilicide (Ni Si₂) nanorods using Ni and Si implantation combined with a laser annealing process. We found that Ni Si₂ nanorods are formed when the as-implanted Si samples are laser annealed at the energy density of 700 mJ cm². Based on the Fowler-Nordheim theory, field emission behavior of the Ni Si₂ nanorod samples has been characterized. The turn-on field and a field enhancement factor were measured to be 7.6 V/μm and about 630, respectively. A possible mechanism is given to describe how the Ni Si₂ nanorods embedded in crystallized Si are formed during the laser annealing. © 2006 American Institute of Physics.