Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition

K. W. Wong; X. T. Zhou; Frederick C. K. Au; H. L. Lai; C. S. Lee; S. T. Lee

doi:10.1063/1.125189

Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition

K. W. Wong, X. T. Zhou, Frederick C. K. Au, H. L. Lai, C. S. Lee, S. T. Lee

Centre of Super-Diamond and Advanced Films

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

210 Citations (Scopus)

Abstract

Silicon carbide (SiC) nanowires on a silicon substrate were prepared using hot-filament-assisted chemical-vapor deposition with a solid silicon and carbon source. The SiC nanowires show good field-emitting properties as revealed by the current-voltage characteristics. Together with its ease of preparation, these SiC nanowires are shown to have great potential in the area of electron field-emitting devices. © 1999 American Institute of Physics.

Original language	English
Pages (from-to)	2918-2920
Journal	Applied Physics Letters
Volume	75
Issue number	19
DOIs	https://doi.org/10.1063/1.125189
Publication status	Published - 8 Nov 1999

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@article{e35d5aeb049a45e180177debc048e326,

title = "Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition",

abstract = "Silicon carbide (SiC) nanowires on a silicon substrate were prepared using hot-filament-assisted chemical-vapor deposition with a solid silicon and carbon source. The SiC nanowires show good field-emitting properties as revealed by the current-voltage characteristics. Together with its ease of preparation, these SiC nanowires are shown to have great potential in the area of electron field-emitting devices. {\textcopyright} 1999 American Institute of Physics.",

author = "Wong, {K. W.} and Zhou, {X. T.} and Au, {Frederick C. K.} and Lai, {H. L.} and Lee, {C. S.} and Lee, {S. T.}",

year = "1999",

month = nov,

day = "8",

doi = "10.1063/1.125189",

language = "English",

volume = "75",

pages = "2918--2920",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition

AU - Wong, K. W.

AU - Zhou, X. T.

AU - Au, Frederick C. K.

AU - Lai, H. L.

AU - Lee, C. S.

AU - Lee, S. T.

PY - 1999/11/8

Y1 - 1999/11/8

N2 - Silicon carbide (SiC) nanowires on a silicon substrate were prepared using hot-filament-assisted chemical-vapor deposition with a solid silicon and carbon source. The SiC nanowires show good field-emitting properties as revealed by the current-voltage characteristics. Together with its ease of preparation, these SiC nanowires are shown to have great potential in the area of electron field-emitting devices. © 1999 American Institute of Physics.

AB - Silicon carbide (SiC) nanowires on a silicon substrate were prepared using hot-filament-assisted chemical-vapor deposition with a solid silicon and carbon source. The SiC nanowires show good field-emitting properties as revealed by the current-voltage characteristics. Together with its ease of preparation, these SiC nanowires are shown to have great potential in the area of electron field-emitting devices. © 1999 American Institute of Physics.

UR - http://www.scopus.com/inward/record.url?scp=0001467969&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0001467969&origin=recordpage

U2 - 10.1063/1.125189

DO - 10.1063/1.125189

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 75

SP - 2918

EP - 2920

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition

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