Field emission characteristics of oriented-AlN thin film on tungsten tip

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

18 Scopus Citations
View graph of relations

Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)215-219
Journal / PublicationApplied Surface Science
Volume251
Issue number1-4
Online published25 Apr 2005
Publication statusPublished - 15 Sep 2005
Externally publishedYes

Abstract

(0 0 2) Oriented-aluminum nitride (AlN) films with different thicknesses were deposited on tungsten (W) tips by using radio frequency magnetron reactive sputtering system. Compared studies of field emission (FE) characteristics were performed between the bare and AlN coated W tips. The results showed that enhanced electron emission could be obtained from oriented-AlN film on W tip. The hysteresis behaviors shown in Current-electric field (I-E) curves during downward electric field sweeps were observed, and the extent of hysteresis in I-E curves strongly depended on the thickness of the AlN film. The stability measurement of FE current presented that the hysteresis could be attributed to the charging in AlN film as an insulator.

Research Area(s)

  • Aluminum nitride, Field emission, Orientation

Citation Format(s)

Field emission characteristics of oriented-AlN thin film on tungsten tip. / Yue, S.L.; Gu, C.Z.; Shi, C.Y.; Zhi, C.Y.

In: Applied Surface Science, Vol. 251, No. 1-4, 15.09.2005, p. 215-219.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review