Field emission characteristics of oriented-AlN thin film on tungsten tip

S.L. Yue; C.Z. Gu; C.Y. Shi; C.Y. Zhi

doi:10.1016/j.apsusc.2005.03.105

Field emission characteristics of oriented-AlN thin film on tungsten tip

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Overview

25 Scopus Citations

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Author(s)

S.L. Yue
C.Z. Gu
C.Y. Shi
C.Y. Zhi

Detail(s)

Original language	English
Pages (from-to)	215-219
Journal / Publication	Applied Surface Science
Volume	251
Issue number	1-4
Online published	25 Apr 2005
Publication status	Published - 15 Sept 2005
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1016/j.apsusc.2005.03.105 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-27544481809&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(7ad9744c-74e1-40da-a6c6-9a9a28b1acaa).html

Abstract

(0 0 2) Oriented-aluminum nitride (AlN) films with different thicknesses were deposited on tungsten (W) tips by using radio frequency magnetron reactive sputtering system. Compared studies of field emission (FE) characteristics were performed between the bare and AlN coated W tips. The results showed that enhanced electron emission could be obtained from oriented-AlN film on W tip. The hysteresis behaviors shown in Current-electric field (I-E) curves during downward electric field sweeps were observed, and the extent of hysteresis in I-E curves strongly depended on the thickness of the AlN film. The stability measurement of FE current presented that the hysteresis could be attributed to the charging in AlN film as an insulator.