Field emission characteristics of oriented AlN thin film on tungsten tip

Shuanglin Yue; Changzhi Gu; Chengying Shi; Chunyi Zhi

doi:10.1109/IVESC.2004.1414141

Field emission characteristics of oriented AlN thin film on tungsten tip

Shuanglin Yue
, Changzhi Gu
, Chengying Shi
, Chunyi Zhi

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

By using radio frequency magnetron reactive sputtering system, oriented AlN films with different thickness were deposited on tungsten tips. Compared studies of field emission characteristics were performed between the bare and A1N coated W tips. The results showed that enhanced electron emission can be obtained from oriented A1N film on W tip. The hysteresis behaviors shown in Current-Electric field (I-E) curves during downward electric field sweeps were observed and the extent of hysteresis in I-E curves strongly depended on the thickness of the A1N films. The stability measurement of field emission current presented that the hysteresis can be attributed to the charging in A1N film as an insulator.

Original language	English
Title of host publication	IVESC2004 - The 5th International Vacuum Electron Sources Conference Proceedings
Pages	81-83
DOIs	https://doi.org/10.1109/IVESC.2004.1414141
Publication status	Published - Sept 2004
Externally published	Yes
Event	5th International Vacuum Electron Sources Conference (IVESC2004) - The Media Center Hotel, Beijing, China Duration: 6 Sept 2004 → 10 Sept 2004

Conference

Conference	5th International Vacuum Electron Sources Conference (IVESC2004)
Place	China
City	Beijing
Period	6/09/04 → 10/09/04

Access Output

10.1109/IVESC.2004.1414141

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@inproceedings{465be94a48b44e59b465e023d0d17744,

title = "Field emission characteristics of oriented AlN thin film on tungsten tip",

abstract = "By using radio frequency magnetron reactive sputtering system, oriented AlN films with different thickness were deposited on tungsten tips. Compared studies of field emission characteristics were performed between the bare and A1N coated W tips. The results showed that enhanced electron emission can be obtained from oriented A1N film on W tip. The hysteresis behaviors shown in Current-Electric field (I-E) curves during downward electric field sweeps were observed and the extent of hysteresis in I-E curves strongly depended on the thickness of the A1N films. The stability measurement of field emission current presented that the hysteresis can be attributed to the charging in A1N film as an insulator.",

author = "Shuanglin Yue and Changzhi Gu and Chengying Shi and Chunyi Zhi",

year = "2004",

month = sep,

doi = "10.1109/IVESC.2004.1414141",

language = "English",

isbn = "0780384377",

pages = "81--83",

booktitle = "IVESC2004 - The 5th International Vacuum Electron Sources Conference Proceedings",

note = "5th International Vacuum Electron Sources Conference (IVESC2004) ; Conference date: 06-09-2004 Through 10-09-2004",

}

Field emission characteristics of oriented AlN thin film on tungsten tip. / Yue, Shuanglin; Gu, Changzhi; Shi, Chengying et al.
IVESC2004 - The 5th International Vacuum Electron Sources Conference Proceedings. 2004. p. 81-83.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Field emission characteristics of oriented AlN thin film on tungsten tip

AU - Yue, Shuanglin

AU - Gu, Changzhi

AU - Shi, Chengying

AU - Zhi, Chunyi

PY - 2004/9

Y1 - 2004/9

N2 - By using radio frequency magnetron reactive sputtering system, oriented AlN films with different thickness were deposited on tungsten tips. Compared studies of field emission characteristics were performed between the bare and A1N coated W tips. The results showed that enhanced electron emission can be obtained from oriented A1N film on W tip. The hysteresis behaviors shown in Current-Electric field (I-E) curves during downward electric field sweeps were observed and the extent of hysteresis in I-E curves strongly depended on the thickness of the A1N films. The stability measurement of field emission current presented that the hysteresis can be attributed to the charging in A1N film as an insulator.

AB - By using radio frequency magnetron reactive sputtering system, oriented AlN films with different thickness were deposited on tungsten tips. Compared studies of field emission characteristics were performed between the bare and A1N coated W tips. The results showed that enhanced electron emission can be obtained from oriented A1N film on W tip. The hysteresis behaviors shown in Current-Electric field (I-E) curves during downward electric field sweeps were observed and the extent of hysteresis in I-E curves strongly depended on the thickness of the A1N films. The stability measurement of field emission current presented that the hysteresis can be attributed to the charging in A1N film as an insulator.

UR - https://www.scopus.com/pages/publications/20444382100

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-20444382100&origin=recordpage

U2 - 10.1109/IVESC.2004.1414141

DO - 10.1109/IVESC.2004.1414141

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0780384377

SP - 81

EP - 83

BT - IVESC2004 - The 5th International Vacuum Electron Sources Conference Proceedings

T2 - 5th International Vacuum Electron Sources Conference (IVESC2004)

Y2 - 6 September 2004 through 10 September 2004

ER -

Field emission characteristics of oriented AlN thin film on tungsten tip

Abstract

Conference

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Cite this