Abstract
(0 0 2) Oriented-aluminum nitride (AlN) films with different thicknesses were deposited on tungsten (W) tips by using radio frequency magnetron reactive sputtering system. Compared studies of field emission (FE) characteristics were performed between the bare and AlN coated W tips. The results showed that enhanced electron emission could be obtained from oriented-AlN film on W tip. The hysteresis behaviors shown in Current-electric field (I-E) curves during downward electric field sweeps were observed, and the extent of hysteresis in I-E curves strongly depended on the thickness of the AlN film. The stability measurement of FE current presented that the hysteresis could be attributed to the charging in AlN film as an insulator.
| Original language | English |
|---|---|
| Pages (from-to) | 215-219 |
| Journal | Applied Surface Science |
| Volume | 251 |
| Issue number | 1-4 |
| Online published | 25 Apr 2005 |
| DOIs | |
| Publication status | Published - 15 Sept 2005 |
| Externally published | Yes |
Research Keywords
- Aluminum nitride
- Field emission
- Orientation