Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications

L. Liao; H. J. Fan; B. Yan; Z. Zhang; L. L. Chen; B. S. Li; G. Z. Xing; Z. X. Shen; T. Wu; X. W. Sun; J. Wang; T. Yu

doi:10.1021/nn800808s

Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications

L. Liao
, H. J. Fan
, B. Yan
, Z. Zhang
, L. L. Chen
, B. S. Li
, G. Z. Xing
, Z. X. Shen
, T. Wu
, X. W. Sun
, J. Wang
, T. Yu^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

96 Citations (Scopus)

Abstract

We report the fabrication and characterization of ZnO nanowire memory devices using a ferroelectric Pb(Zr _0.3Ti _0.7)O ₃ (PZT) film as the gate dielectric and the charge storage medium. With a comparison to nanowire transistors based on SiO ₂ gate oxide, the devices were evaluated in terms of their electric transport, retention, and endurance performance. Memory effects are observed as characterized by an eminent counterclockwise loop in I-V _g curves, which is attributed to the switchable remnant polarization of PZT. The single-nanowire device exhibits a high (up to 10 ³) on/off ratio at zero gate voltage. Our results give a proof-ofprinciple demonstration of the memory application based on a combination of nanowires (as channels) and ferroelectric films (as gate oxide). © 2009 American Chemical Society.

Original language	English
Pages (from-to)	700-706
Journal	ACS Nano
Volume	3
Issue number	3
DOIs	https://doi.org/10.1021/nn800808s
Publication status	Published - 24 Mar 2009
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Research Keywords

Depletion
Ferroelectric
Field effect transistor
Nanowires
Nonvolatile memory
PZT
ZnO

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title = "Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications",

abstract = "We report the fabrication and characterization of ZnO nanowire memory devices using a ferroelectric Pb(Zr 0.3Ti 0.7)O 3 (PZT) film as the gate dielectric and the charge storage medium. With a comparison to nanowire transistors based on SiO 2 gate oxide, the devices were evaluated in terms of their electric transport, retention, and endurance performance. Memory effects are observed as characterized by an eminent counterclockwise loop in I-V g curves, which is attributed to the switchable remnant polarization of PZT. The single-nanowire device exhibits a high (up to 10 3) on/off ratio at zero gate voltage. Our results give a proof-ofprinciple demonstration of the memory application based on a combination of nanowires (as channels) and ferroelectric films (as gate oxide). {\textcopyright} 2009 American Chemical Society.",

keywords = "Depletion, Ferroelectric, Field effect transistor, Nanowires, Nonvolatile memory, PZT, ZnO",

author = "L. Liao and Fan, \{H. J.\} and B. Yan and Z. Zhang and Chen, \{L. L.\} and Li, \{B. S.\} and Xing, \{G. Z.\} and Shen, \{Z. X.\} and T. Wu and Sun, \{X. W.\} and J. Wang and T. Yu",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "2009",

month = mar,

day = "24",

doi = "10.1021/nn800808s",

language = "English",

volume = "3",

pages = "700--706",

journal = "ACS Nano",

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TY - JOUR

T1 - Ferroelectric transistors with nanowire channel

T2 - Toward nonvolatile memory applications

AU - Liao, L.

AU - Fan, H. J.

AU - Yan, B.

AU - Zhang, Z.

AU - Chen, L. L.

AU - Li, B. S.

AU - Xing, G. Z.

AU - Shen, Z. X.

AU - Wu, T.

AU - Sun, X. W.

AU - Wang, J.

AU - Yu, T.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2009/3/24

Y1 - 2009/3/24

N2 - We report the fabrication and characterization of ZnO nanowire memory devices using a ferroelectric Pb(Zr 0.3Ti 0.7)O 3 (PZT) film as the gate dielectric and the charge storage medium. With a comparison to nanowire transistors based on SiO 2 gate oxide, the devices were evaluated in terms of their electric transport, retention, and endurance performance. Memory effects are observed as characterized by an eminent counterclockwise loop in I-V g curves, which is attributed to the switchable remnant polarization of PZT. The single-nanowire device exhibits a high (up to 10 3) on/off ratio at zero gate voltage. Our results give a proof-ofprinciple demonstration of the memory application based on a combination of nanowires (as channels) and ferroelectric films (as gate oxide). © 2009 American Chemical Society.

AB - We report the fabrication and characterization of ZnO nanowire memory devices using a ferroelectric Pb(Zr 0.3Ti 0.7)O 3 (PZT) film as the gate dielectric and the charge storage medium. With a comparison to nanowire transistors based on SiO 2 gate oxide, the devices were evaluated in terms of their electric transport, retention, and endurance performance. Memory effects are observed as characterized by an eminent counterclockwise loop in I-V g curves, which is attributed to the switchable remnant polarization of PZT. The single-nanowire device exhibits a high (up to 10 3) on/off ratio at zero gate voltage. Our results give a proof-ofprinciple demonstration of the memory application based on a combination of nanowires (as channels) and ferroelectric films (as gate oxide). © 2009 American Chemical Society.

KW - Depletion

KW - Ferroelectric

KW - Field effect transistor

KW - Nanowires

KW - Nonvolatile memory

KW - PZT

KW - ZnO

UR - https://www.scopus.com/pages/publications/65249119657

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-65249119657&origin=recordpage

U2 - 10.1021/nn800808s

DO - 10.1021/nn800808s

M3 - RGC 21 - Publication in refereed journal

SN - 1936-0851

VL - 3

SP - 700

EP - 706

JO - ACS Nano

JF - ACS Nano

IS - 3

ER -

Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications

Abstract

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