Faraday effect in ZnO: Mn thin films

F. Oliveira, M. F. Cerqueira, M. I. Vasilevskiy, T. Viseu, N. A. Sobolev, M. C. Carmo

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

Undoped and Mn-doped ZnO transparent thin films were grown by RF magnetron co-sputtering. The films are nanocrystalline, with wurtzite-structure grains of a typical size of 20 nm, with a preferential orientation of the c-axis perpendicular to the surface. Although, according to the Raman spectroscopy data, Mn mostly substitutes Zn in the lattice sites, factor that is considered favorable for ferromagnetism in this material, the ZnO:Mn films are paramagnetic at room temperature as it follows from our Faraday effect (FE) measurements. The FE spectra show a significant influence of the Mn ions for photon energies sufficiently below the ZnO:Mn band gap but not in its vicinity. © 2011 American Institute of Physics.
Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages143-144
Volume1399
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event30th International Conference on the Physics of Semiconductors (ICPS 2010) - Seoul, Korea, Republic of
Duration: 25 Jul 201030 Jul 2010

Publication series

Name
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference30th International Conference on the Physics of Semiconductors (ICPS 2010)
Country/TerritoryKorea, Republic of
CitySeoul
Period25/07/1030/07/10

Research Keywords

  • Faraday effect
  • thin films
  • ZnO:Mn

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