Far infrared reflectivity of a GaAs/Al0.33Ga0.67As multiple quantum well structure

P. M. Nikolić; Z. Ristovski; S. Crossed D Sign urić; V. Blagojević; M. D. Dramićanin; D. Siapkas; T. T. Zorba; M. Henini

doi:10.1016/0026-2692(95)00057-7

Far infrared reflectivity of a GaAs/Al_0.33Ga_0.67As multiple quantum well structure

P. M. Nikolić
, Z. Ristovski
, S. Crossed D Sign urić
, V. Blagojević
, M. D. Dramićanin
, D. Siapkas
, T. T. Zorba
, M. Henini

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Abstract

Far infrared and mid infrared reflectivity measurements for a GaAs/Al_0.33Ga_0.67As superlattice structure were made at room temperature and analyzed using a modified model developed by Scamarcio et al. (Phys. Rev. B, 43 (1991) 14754). A far infrared reflectivity (FIR) diagram of the superlattice was characterized by GaAs and AlAs 'Reststrahlen' bands and Al_.33Ga_.67As modes which were very close to the substrate modes. The individual layer thicknesses of the investigated superlattice were calculated using optical reflectivity measurements.

Original language	English
Pages (from-to)	87-92
Journal	Microelectronics Journal
Volume	27
Issue number	1
DOIs	https://doi.org/10.1016/0026-2692(95)00057-7
Publication status	Published - Feb 1996
Externally published	Yes

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@article{7531c31d248c415691a6d3b84621902a,

title = "Far infrared reflectivity of a GaAs/Al0.33Ga0.67As multiple quantum well structure",

abstract = "Far infrared and mid infrared reflectivity measurements for a GaAs/Al0.33Ga0.67As superlattice structure were made at room temperature and analyzed using a modified model developed by Scamarcio et al. (Phys. Rev. B, 43 (1991) 14754). A far infrared reflectivity (FIR) diagram of the superlattice was characterized by GaAs and AlAs 'Reststrahlen' bands and Al.33Ga.67As modes which were very close to the substrate modes. The individual layer thicknesses of the investigated superlattice were calculated using optical reflectivity measurements.",

author = "Nikoli{\'c}, \{P. M.\} and Z. Ristovski and \{Crossed D Sign uri{\'c}\}, S. and V. Blagojevi{\'c} and Drami{\'c}anin, \{M. D.\} and D. Siapkas and Zorba, \{T. T.\} and M. Henini",

year = "1996",

month = feb,

doi = "10.1016/0026-2692(95)00057-7",

language = "English",

volume = "27",

pages = "87--92",

journal = "Microelectronics Journal",

issn = "0026-2692",

publisher = "Elsevier Ltd.",

number = "1",

}

TY - JOUR

T1 - Far infrared reflectivity of a GaAs/Al0.33Ga0.67As multiple quantum well structure

AU - Nikolić, P. M.

AU - Ristovski, Z.

AU - Crossed D Sign urić, S.

AU - Blagojević, V.

AU - Dramićanin, M. D.

AU - Siapkas, D.

AU - Zorba, T. T.

AU - Henini, M.

PY - 1996/2

Y1 - 1996/2

N2 - Far infrared and mid infrared reflectivity measurements for a GaAs/Al0.33Ga0.67As superlattice structure were made at room temperature and analyzed using a modified model developed by Scamarcio et al. (Phys. Rev. B, 43 (1991) 14754). A far infrared reflectivity (FIR) diagram of the superlattice was characterized by GaAs and AlAs 'Reststrahlen' bands and Al.33Ga.67As modes which were very close to the substrate modes. The individual layer thicknesses of the investigated superlattice were calculated using optical reflectivity measurements.

AB - Far infrared and mid infrared reflectivity measurements for a GaAs/Al0.33Ga0.67As superlattice structure were made at room temperature and analyzed using a modified model developed by Scamarcio et al. (Phys. Rev. B, 43 (1991) 14754). A far infrared reflectivity (FIR) diagram of the superlattice was characterized by GaAs and AlAs 'Reststrahlen' bands and Al.33Ga.67As modes which were very close to the substrate modes. The individual layer thicknesses of the investigated superlattice were calculated using optical reflectivity measurements.

UR - https://www.scopus.com/pages/publications/0030080777

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0030080777&origin=recordpage

U2 - 10.1016/0026-2692(95)00057-7

DO - 10.1016/0026-2692(95)00057-7

M3 - RGC 21 - Publication in refereed journal

SN - 0026-2692

VL - 27

SP - 87

EP - 92

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 1

ER -