Failure induced by thermomigration of interstitial Cu in Pb-free flip chip solder joints

Hsiao-Yun Chen; Chih Chen; King-Ning Tu

doi:10.1063/1.2990047

Failure induced by thermomigration of interstitial Cu in Pb-free flip chip solder joints

Hsiao-Yun Chen
, Chih Chen
, King-Ning Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

65 Citations (Scopus)

Abstract

Failure induced by thermomigration in Pb-free SnAg flip chip solder joints has been investigated by electromigration tests under 9.7× 10³ A/ cm² at 150 °C. The fast interstitial diffusion of Cu atoms from underbump metallization into Sn matrix caused void formation at the passivation opening on the chip side. The Cu diffusion was driven by a large thermal gradient and led to void formation even in the neighboring unpowered bumps. When the thermal gradient is above 400 °C/cm, theoretical calculation indicates that the thermomigration force is greater than the electromigration force at 9.7× 10³ A/ cm² stressing. © 2008 American Institute of Physics.

Original language	English
Article number	122103
Journal	Applied Physics Letters
Volume	93
Issue number	12
DOIs	https://doi.org/10.1063/1.2990047
Publication status	Published - 2008
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "Failure induced by thermomigration of interstitial Cu in Pb-free flip chip solder joints",

abstract = "Failure induced by thermomigration in Pb-free SnAg flip chip solder joints has been investigated by electromigration tests under 9.7× 103 A/ cm2 at 150 °C. The fast interstitial diffusion of Cu atoms from underbump metallization into Sn matrix caused void formation at the passivation opening on the chip side. The Cu diffusion was driven by a large thermal gradient and led to void formation even in the neighboring unpowered bumps. When the thermal gradient is above 400 °C/cm, theoretical calculation indicates that the thermomigration force is greater than the electromigration force at 9.7× 103 A/ cm2 stressing. {\textcopyright} 2008 American Institute of Physics.",

author = "Hsiao-Yun Chen and Chih Chen and King-Ning Tu",

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T1 - Failure induced by thermomigration of interstitial Cu in Pb-free flip chip solder joints

AU - Chen, Hsiao-Yun

AU - Chen, Chih

AU - Tu, King-Ning

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2008

Y1 - 2008

N2 - Failure induced by thermomigration in Pb-free SnAg flip chip solder joints has been investigated by electromigration tests under 9.7× 103 A/ cm2 at 150 °C. The fast interstitial diffusion of Cu atoms from underbump metallization into Sn matrix caused void formation at the passivation opening on the chip side. The Cu diffusion was driven by a large thermal gradient and led to void formation even in the neighboring unpowered bumps. When the thermal gradient is above 400 °C/cm, theoretical calculation indicates that the thermomigration force is greater than the electromigration force at 9.7× 103 A/ cm2 stressing. © 2008 American Institute of Physics.

AB - Failure induced by thermomigration in Pb-free SnAg flip chip solder joints has been investigated by electromigration tests under 9.7× 103 A/ cm2 at 150 °C. The fast interstitial diffusion of Cu atoms from underbump metallization into Sn matrix caused void formation at the passivation opening on the chip side. The Cu diffusion was driven by a large thermal gradient and led to void formation even in the neighboring unpowered bumps. When the thermal gradient is above 400 °C/cm, theoretical calculation indicates that the thermomigration force is greater than the electromigration force at 9.7× 103 A/ cm2 stressing. © 2008 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/52949145973

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-52949145973&origin=recordpage

U2 - 10.1063/1.2990047

DO - 10.1063/1.2990047

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122103

ER -

Failure induced by thermomigration of interstitial Cu in Pb-free flip chip solder joints

Abstract

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