TY - GEN
T1 - Failure analysis of single and dual nc-ITO embedded ZrHfO high-k nonvolatile memories
AU - Yang, Chia-Han
AU - Kuo, Yue
AU - Lin, Chen-Han
AU - Kuo, Way
PY - 2009
Y1 - 2009
N2 - The nanocrystaline indium tin oxide (nc-ITO) embedded Zr-doped HfO 2 (ZrHfO) high-k dielectric has been fabricated into nonvolatile memories with a low leakage currents, a large charge-storage capacity, and a long charge retention time. Recently, it has demonstrated that the dual-layer nc-ITO embedded capacitor has a charge trapping density more than double that of the single-layer nc-ITO embedded capacitor with a faster charging rate. In this paper, authors investigated the charge transport and the breakdown mechanisms of the single- and dual-layer nc-ITO embedded ZrHfO thin films. The charges transport followed the F-N tunneling mechanism. In addition, the dual-layer nc-ITO embedded capacitor has smaller breakdown strength and a larger leakage current than the single-layer nc-ITO embedded capacitor. © The Electrochemical Society.
AB - The nanocrystaline indium tin oxide (nc-ITO) embedded Zr-doped HfO 2 (ZrHfO) high-k dielectric has been fabricated into nonvolatile memories with a low leakage currents, a large charge-storage capacity, and a long charge retention time. Recently, it has demonstrated that the dual-layer nc-ITO embedded capacitor has a charge trapping density more than double that of the single-layer nc-ITO embedded capacitor with a faster charging rate. In this paper, authors investigated the charge transport and the breakdown mechanisms of the single- and dual-layer nc-ITO embedded ZrHfO thin films. The charges transport followed the F-N tunneling mechanism. In addition, the dual-layer nc-ITO embedded capacitor has smaller breakdown strength and a larger leakage current than the single-layer nc-ITO embedded capacitor. © The Electrochemical Society.
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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-76549083259&origin=recordpage
U2 - 10.1149/1.3206645
DO - 10.1149/1.3206645
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 9781566777438
VL - 25
SP - 457
EP - 464
BT - ECS Transactions
T2 - 7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
Y2 - 5 October 2009 through 7 October 2009
ER -