Abstract
Two new quaternary thioarsenates(III), SrAg4As2S6⋅2 H2O (1) and BaAgAsS3 (2), have been prepared through a hydrazine-hydrothermal method at low temperature. Compound 1 possesses a two-dimensional (2D) layer network, while compound 2 features a one-dimensional (1D) column structure. The detailed structure analysis indicates that Sr2+ and Ba2+ cations have different directing effects on the structures of thioarsenates(III). Both experimental and theoretical studies demonstrate that compounds 1 and 2 are narrow-gap semiconductors. Our success in synthesizing these two quaternary thioarsenates(III) proves that the hydrazine-hydrothermal technique is a powerful yet facile synthetic method for exploring new complex chalcogenides with diverse crystal structures and interesting physical properties.
| Original language | English |
|---|---|
| Pages (from-to) | 1842-1848 |
| Journal | Chemistry - An Asian Journal |
| Volume | 11 |
| Issue number | 12 |
| Online published | 28 Apr 2016 |
| DOIs | |
| Publication status | Published - 21 Jun 2016 |
| Externally published | Yes |
Research Keywords
- column structure
- hydrazine-hydrothermal
- layer networks
- semiconductors
- thioarsenates(III)
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