Fabrication of SOI structure with AlN film as buried insulator by Ion-Cut process

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • Chuanling Men
  • Zheng Xu
  • Zhenghua An
  • Qing Wan
  • Xinyun Xie
  • Chenglu Lin

Detail(s)

Original languageEnglish
Pages (from-to)287-292
Journal / PublicationApplied Surface Science
Volume199
Issue number1-4
Publication statusPublished - 30 Oct 2002

Abstract

Self-heating effects in silicon-on-insulator (SOI) devices limit the applicability of SOI materials in electronics in cases where high power dissipation is expected. Aluminum nitride (AlN) as a potential candidate for buried insulator materials in SOI structures has been investigated. Uniform AlN films were grown on 4in. Si(1 0 0) wafers using ion-beam-enhanced deposition (IBED) under optimized experimental conditions. The films have excellent dielectric properties and a smooth surface with roughness rms values of 0.13 nm, and are good enough for direct bonding. SOI structure with the AlN film, as buried insulator, was successfully formed by the Ion-Cut process. © 2002 Elsevier Science B.V. All rights reserved.

Research Area(s)

  • AlN film, Bonding, Ion-beam-enhanced deposition, SOI

Citation Format(s)

Fabrication of SOI structure with AlN film as buried insulator by Ion-Cut process. / Men, Chuanling; Xu, Zheng; An, Zhenghua; Chu, Paul K; Wan, Qing; Xie, Xinyun; Lin, Chenglu.

In: Applied Surface Science, Vol. 199, No. 1-4, 30.10.2002, p. 287-292.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal