TY - JOUR
T1 - Fabrication of SOI structure with AlN film as buried insulator by Ion-Cut process
AU - Men, Chuanling
AU - Xu, Zheng
AU - An, Zhenghua
AU - Chu, Paul K
AU - Wan, Qing
AU - Xie, Xinyun
AU - Lin, Chenglu
PY - 2002/10/30
Y1 - 2002/10/30
N2 - Self-heating effects in silicon-on-insulator (SOI) devices limit the applicability of SOI materials in electronics in cases where high power dissipation is expected. Aluminum nitride (AlN) as a potential candidate for buried insulator materials in SOI structures has been investigated. Uniform AlN films were grown on 4in. Si(1 0 0) wafers using ion-beam-enhanced deposition (IBED) under optimized experimental conditions. The films have excellent dielectric properties and a smooth surface with roughness rms values of 0.13 nm, and are good enough for direct bonding. SOI structure with the AlN film, as buried insulator, was successfully formed by the Ion-Cut process. © 2002 Elsevier Science B.V. All rights reserved.
AB - Self-heating effects in silicon-on-insulator (SOI) devices limit the applicability of SOI materials in electronics in cases where high power dissipation is expected. Aluminum nitride (AlN) as a potential candidate for buried insulator materials in SOI structures has been investigated. Uniform AlN films were grown on 4in. Si(1 0 0) wafers using ion-beam-enhanced deposition (IBED) under optimized experimental conditions. The films have excellent dielectric properties and a smooth surface with roughness rms values of 0.13 nm, and are good enough for direct bonding. SOI structure with the AlN film, as buried insulator, was successfully formed by the Ion-Cut process. © 2002 Elsevier Science B.V. All rights reserved.
KW - AlN film
KW - Bonding
KW - Ion-beam-enhanced deposition
KW - SOI
UR - http://www.scopus.com/inward/record.url?scp=0037202083&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0037202083&origin=recordpage
U2 - 10.1016/S0169-4332(02)00864-4
DO - 10.1016/S0169-4332(02)00864-4
M3 - RGC 21 - Publication in refereed journal
SN - 0169-4332
VL - 199
SP - 287
EP - 292
JO - Applied Surface Science
JF - Applied Surface Science
IS - 1-4
ER -