Fabrication of Single-Crystal Violet Phosphorus Flakes For Ultrasensitive Photodetection

Yumin Da; Yongheng Zhou; Shuai Zhang; Yang Li; Tongtong Jiang; Wenting Zhu; Paul K. Chu; Xue-Feng Yu; Xiaolong Chen; Jiahong Wang

doi:10.1002/smll.202310276

Fabrication of Single-Crystal Violet Phosphorus Flakes For Ultrasensitive Photodetection

Yumin Da, Yongheng Zhou, Shuai Zhang, Yang Li, Tongtong Jiang, Wenting Zhu, Paul K. Chu, Xue-Feng Yu, Xiaolong Chen^*, Jiahong Wang^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

5 Citations (Scopus)

Abstract

Violet phosphorus (VP) has attracted a lot of attention for its unique physicochemical properties and emerging potential in photoelectronic applications. Although VP has a van der Waals (vdW) structure similar to that of other 2D semiconductors, direct synthesis of VP on a substrate is still challenging. Moreover, optoelectronic devices composed of transfer-free VP flakes have not been demonstrated. Herein, a bismuth-assisted vapor phase transport technique is designed to grow uniform single-crystal VP flakes on the SiO₂/Si substrate directly. The size of the crystalline VP flakes is an order of magnitude larger than that of previous liquid-exfoliated samples. The photodetector fabricated with the VP flakes shows a high responsivity of 12.5 A W⁻¹ and response/recovery time of 3.82/3.03 ms upon exposure to 532 nm light. Furthermore, the photodetector shows a small dark current (<1 pA) that is beneficial to high-sensitivity photodetection. As a result, the detectivity is 1.38 × 10¹³ Jones that is comparable with that of the vdW p–n heterojunction detector. The results reveal the great potential of VP in optoelectronic devices as well as the CVT technique for the growth of single-crystal semiconductor thin films. © 2024 Wiley-VCH GmbH.

Original language	English
Article number	2310276
Journal	Small
Volume	20
Issue number	30
Online published	3 Mar 2024
DOIs	https://doi.org/10.1002/smll.202310276
Publication status	Published - 25 Jul 2024

Funding

Y.D. and Y.Z. contributed equally to this work. The authors acknowledge the financial support from the National Natural Science Foundation of China (21975280, 32101197, and 62275117), Youth Innovation Promotion Association Chinese Academy of Sciences (2020354), Shenzhen Science and Technology Program (JCYJ20220818100806014), Shenzhen Excellent Youth Program (RCYX 20221008092900001), City University of Hong Kong Donation Research Grants (DON-RMG 9229021 and 9220061), City University of Hong Kong Strategic Research Grant (SRG No. 7005505), and Guangdong Major Talent Project (2019QN01C177). The authors thank Prof. Jun Liu of South China University of Technology for the FIB assistance.

Research Keywords

2D materials
chemical vapor transport
low light photodetector
violet phosphorus

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title = "Fabrication of Single-Crystal Violet Phosphorus Flakes For Ultrasensitive Photodetection",

abstract = "Violet phosphorus (VP) has attracted a lot of attention for its unique physicochemical properties and emerging potential in photoelectronic applications. Although VP has a van der Waals (vdW) structure similar to that of other 2D semiconductors, direct synthesis of VP on a substrate is still challenging. Moreover, optoelectronic devices composed of transfer-free VP flakes have not been demonstrated. Herein, a bismuth-assisted vapor phase transport technique is designed to grow uniform single-crystal VP flakes on the SiO2/Si substrate directly. The size of the crystalline VP flakes is an order of magnitude larger than that of previous liquid-exfoliated samples. The photodetector fabricated with the VP flakes shows a high responsivity of 12.5 A W−1 and response/recovery time of 3.82/3.03 ms upon exposure to 532 nm light. Furthermore, the photodetector shows a small dark current (<1 pA) that is beneficial to high-sensitivity photodetection. As a result, the detectivity is 1.38 × 1013 Jones that is comparable with that of the vdW p–n heterojunction detector. The results reveal the great potential of VP in optoelectronic devices as well as the CVT technique for the growth of single-crystal semiconductor thin films. {\textcopyright} 2024 Wiley-VCH GmbH.",

keywords = "2D materials, chemical vapor transport, low light photodetector, violet phosphorus",

author = "Yumin Da and Yongheng Zhou and Shuai Zhang and Yang Li and Tongtong Jiang and Wenting Zhu and Chu, {Paul K.} and Xue-Feng Yu and Xiaolong Chen and Jiahong Wang",

year = "2024",

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doi = "10.1002/smll.202310276",

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T1 - Fabrication of Single-Crystal Violet Phosphorus Flakes For Ultrasensitive Photodetection

AU - Da, Yumin

AU - Zhou, Yongheng

AU - Zhang, Shuai

AU - Li, Yang

AU - Jiang, Tongtong

AU - Zhu, Wenting

AU - Chu, Paul K.

AU - Yu, Xue-Feng

AU - Chen, Xiaolong

AU - Wang, Jiahong

PY - 2024/7/25

Y1 - 2024/7/25

N2 - Violet phosphorus (VP) has attracted a lot of attention for its unique physicochemical properties and emerging potential in photoelectronic applications. Although VP has a van der Waals (vdW) structure similar to that of other 2D semiconductors, direct synthesis of VP on a substrate is still challenging. Moreover, optoelectronic devices composed of transfer-free VP flakes have not been demonstrated. Herein, a bismuth-assisted vapor phase transport technique is designed to grow uniform single-crystal VP flakes on the SiO2/Si substrate directly. The size of the crystalline VP flakes is an order of magnitude larger than that of previous liquid-exfoliated samples. The photodetector fabricated with the VP flakes shows a high responsivity of 12.5 A W−1 and response/recovery time of 3.82/3.03 ms upon exposure to 532 nm light. Furthermore, the photodetector shows a small dark current (<1 pA) that is beneficial to high-sensitivity photodetection. As a result, the detectivity is 1.38 × 1013 Jones that is comparable with that of the vdW p–n heterojunction detector. The results reveal the great potential of VP in optoelectronic devices as well as the CVT technique for the growth of single-crystal semiconductor thin films. © 2024 Wiley-VCH GmbH.

AB - Violet phosphorus (VP) has attracted a lot of attention for its unique physicochemical properties and emerging potential in photoelectronic applications. Although VP has a van der Waals (vdW) structure similar to that of other 2D semiconductors, direct synthesis of VP on a substrate is still challenging. Moreover, optoelectronic devices composed of transfer-free VP flakes have not been demonstrated. Herein, a bismuth-assisted vapor phase transport technique is designed to grow uniform single-crystal VP flakes on the SiO2/Si substrate directly. The size of the crystalline VP flakes is an order of magnitude larger than that of previous liquid-exfoliated samples. The photodetector fabricated with the VP flakes shows a high responsivity of 12.5 A W−1 and response/recovery time of 3.82/3.03 ms upon exposure to 532 nm light. Furthermore, the photodetector shows a small dark current (<1 pA) that is beneficial to high-sensitivity photodetection. As a result, the detectivity is 1.38 × 1013 Jones that is comparable with that of the vdW p–n heterojunction detector. The results reveal the great potential of VP in optoelectronic devices as well as the CVT technique for the growth of single-crystal semiconductor thin films. © 2024 Wiley-VCH GmbH.

KW - 2D materials

KW - chemical vapor transport

KW - low light photodetector

KW - violet phosphorus

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DO - 10.1002/smll.202310276

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ER -

Fabrication of Single-Crystal Violet Phosphorus Flakes For Ultrasensitive Photodetection

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Fabrication of Single-Crystal Violet Phosphorus Flakes For Ultrasensitive Photodetection

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DON_RMG: Fabrication, Characterization, and Properties of Functional Materials - RMGS

DON: Surface Modification and Fabrication of Advanced Materials

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