Fabrication of Single- and multilayer MoS₂ Film-Based Field-Effect Transistors for Sensing NO at Room Temperature

Single‐ and multilayer MoS₂ films are deposited onto Si/SiO₂ using the mechanical exfoliation technique. The films were then used for the fabrication of field‐effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single‐layer MoS₂ device shows a rapid response after exposure to NO, the current was found to be unstable. The two‐, three‐, and four‐layer MoS₂ devices show both stable and sensitive responses to NO down to a concentration of 0.8 ppm. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.