Fabrication of silicon carbide thin films by plasma immersion ion implantation with self-ignited glow discharge

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Zhenghua An
  • Ricky K.Y. Fu
  • Peng Chen
  • Weili Liu
  • Chenglu Lin

Detail(s)

Original languageEnglish
Pages (from-to)153-157
Journal / PublicationThin Solid Films
Volume447-448
Publication statusPublished - 30 Jan 2004

Conference

TitleProceedings of the 30th International Conference on Metallurgie
PlaceUnited States
CitySan Diego, CA
Period28 April - 2 May 2002

Abstract

Si1-xCx films (SiC) are synthesized by methane/acetylene plasma immersion ion implantation (PIII) into silicon using self-ignited glow discharge and their properties are investigated. The synthesized SiC films have similar elemental composition (ratio) as that of the methane and acetylene precursors, except that the hydrogen content is higher for the films fabricated using methane. The films undergo a transformation from a-Si1-xCx:H to a multi-phase structure with increasing annealing temperature. The amount of Si-C bonds increases with annealing temperature whereas that of the C-C bonds changes in an opposite manner. At high annealing temperature, graphitization takes place in the carbon clusters in the films but the extent is limited. At 1300 °C, the C-C bonds almost disappear completely. © 2003 Elsevier B.V. All rights reserved.

Research Area(s)

  • Glow discharge, Plasma immersion ion implantation, Silicon carbide

Citation Format(s)

Fabrication of silicon carbide thin films by plasma immersion ion implantation with self-ignited glow discharge. / An, Zhenghua; Fu, Ricky K.Y.; Chen, Peng; Liu, Weili; Chu, Paul K.; Lin, Chenglu.

In: Thin Solid Films, Vol. 447-448, 30.01.2004, p. 153-157.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review