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Fabrication of silica-on-silicon waveguide devices by PECVD

  • S. F. Lin
  • , J. P. Hou
  • , C. H. Chiu
  • , J. Y. Lin
  • , T. C. Chu
  • , D. P. Tsai
  • , A.K. Chu

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

Planar lightwave circuits (PLC) utilizing glass related waveguide technologies are nowadays crucial components in optical communication system. In this paper, we present a standardized, silicon dioxide (SiO2) based waveguide structure prepared by plasma enhanced chemical vapor deposition (PECVD) for applications in telecommunication devices, such as wide-band optical power splitter. The index of waveguide layer can be controlled by the N2O:SiH4 ratio and process parameter. High density inductively coupled plasma (ICP) etching system was used to define the waveguide pattern. The fabricated waveguides show satisfactory optical characteristics including low waveguide loss, low chip-to-fiber coupling loss (< 0.5 dB/facet), and low polarization dependence loss (< 0.2 dB).
Original languageEnglish
Title of host publicationOptical Fiber and Planar Waveguide Technology II
EditorsShuisheng Jian, Steven Shen, Katsunari Okamoto
PublisherSPIE
Pages338-344
DOIs
Publication statusPublished - 2002
Externally publishedYes
EventAsia-Pacific Optical and Wireless Communications (APOC 2002) - Shanghai, China
Duration: 16 Oct 200218 Oct 2002

Publication series

NameProceedings of SPIE
Volume4904
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceAsia-Pacific Optical and Wireless Communications (APOC 2002)
PlaceChina
CityShanghai
Period16/10/0218/10/02

Research Keywords

  • ICP
  • PECVD
  • Planar lightwave circuits (PLC)
  • Silica
  • Waveguide
  • Waveguide loss

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