Fabrication of low dielectric constant materials for ULSI multilevel interconnection by plasma ion implantation
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 420-422 |
Journal / Publication | IEEE Electron Device Letters |
Volume | 19 |
Issue number | 11 |
Publication status | Published - Nov 1998 |
Link(s)
Abstract
High dose-rate plasma ion implantation (PII) has been utilized to produce low dielectric constant (k) SiO 2 films for high quality interlayer dielectrics. The SiO 2 films are fluorine-doped/carbon-doped by PII with CF 4 plasma in an inductively-coupled plasma (ICP) reactor. It is found that the use of CF 4 doping results in exceptional dielectric properties which differ significantly from fluorinated SiO 2. The dielectric constant of the SiO 2 film is reduced from 4.1 to 3.5 after 5 minute PII. Other electrical parameters such as bulk resistivity and dielectric breakdown strength are also improved.
Citation Format(s)
Fabrication of low dielectric constant materials for ULSI multilevel interconnection by plasma ion implantation. / Qin, Shu; Zhou, Yuanzhong; Chan, Chung et al.
In: IEEE Electron Device Letters, Vol. 19, No. 11, 11.1998, p. 420-422.
In: IEEE Electron Device Letters, Vol. 19, No. 11, 11.1998, p. 420-422.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review