Fabrication of low dielectric constant materials for ULSI multilevel interconnection by plasma ion implantation

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)420-422
Journal / PublicationIEEE Electron Device Letters
Volume19
Issue number11
Publication statusPublished - Nov 1998

Abstract

High dose-rate plasma ion implantation (PII) has been utilized to produce low dielectric constant (k) SiO 2 films for high quality interlayer dielectrics. The SiO 2 films are fluorine-doped/carbon-doped by PII with CF 4 plasma in an inductively-coupled plasma (ICP) reactor. It is found that the use of CF 4 doping results in exceptional dielectric properties which differ significantly from fluorinated SiO 2. The dielectric constant of the SiO 2 film is reduced from 4.1 to 3.5 after 5 minute PII. Other electrical parameters such as bulk resistivity and dielectric breakdown strength are also improved.