TY - JOUR
T1 - Fabrication of low dielectric constant materials for ULSI multilevel interconnection by plasma ion implantation
AU - Qin, Shu
AU - Zhou, Yuanzhong
AU - Chan, Chung
AU - Chu, Paul K.
PY - 1998/11
Y1 - 1998/11
N2 - High dose-rate plasma ion implantation (PII) has been utilized to produce low dielectric constant (k) SiO 2 films for high quality interlayer dielectrics. The SiO 2 films are fluorine-doped/carbon-doped by PII with CF 4 plasma in an inductively-coupled plasma (ICP) reactor. It is found that the use of CF 4 doping results in exceptional dielectric properties which differ significantly from fluorinated SiO 2. The dielectric constant of the SiO 2 film is reduced from 4.1 to 3.5 after 5 minute PII. Other electrical parameters such as bulk resistivity and dielectric breakdown strength are also improved.
AB - High dose-rate plasma ion implantation (PII) has been utilized to produce low dielectric constant (k) SiO 2 films for high quality interlayer dielectrics. The SiO 2 films are fluorine-doped/carbon-doped by PII with CF 4 plasma in an inductively-coupled plasma (ICP) reactor. It is found that the use of CF 4 doping results in exceptional dielectric properties which differ significantly from fluorinated SiO 2. The dielectric constant of the SiO 2 film is reduced from 4.1 to 3.5 after 5 minute PII. Other electrical parameters such as bulk resistivity and dielectric breakdown strength are also improved.
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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0032205807&origin=recordpage
U2 - 10.1109/55.728899
DO - 10.1109/55.728899
M3 - RGC 21 - Publication in refereed journal
SN - 0741-3106
VL - 19
SP - 420
EP - 422
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 11
ER -