TY - JOUR
T1 - Fabrication of grain orientation BaTiO3 thick film by template grain growth method
AU - Fu, Fang
AU - Zhai, Jiwei
AU - Xu, Zhengkui
AU - Shen, Bo
AU - Yao, Xi
PY - 2011/1
Y1 - 2011/1
N2 - BaTiO3 thick film with a (h00) grain orientation was fabricated by the template grain growth method. The thick film had a single phase of perovskite, with a Lotgering's factor of as high as 86%. The ferroelectric properties of the thick film were investigated. The saturate and remnant polarizations of the grain orientated thick film were 37.3 and 14.4 μCcm 2, respectively. The temperature dependence of the dielectric constant and loss tangent were also evaluated. The Curie temperature of the thick film shifted to a high temperature as compared to that of its randomly orientated counterpart. This could be attributed to the large grain size of the grain oriented thick film. The piezoelectric properties of the thick film were characterized by the relationship of the unipolar strain and applied electric field. The piezoelectric constant d33* of the grain oriented thick film was 154 pm/V, which was higher than that of a randomly oriented film (d33*=100pmV) by more than 50%. © 2010 Elsevier Ltd. All rights reserved.
AB - BaTiO3 thick film with a (h00) grain orientation was fabricated by the template grain growth method. The thick film had a single phase of perovskite, with a Lotgering's factor of as high as 86%. The ferroelectric properties of the thick film were investigated. The saturate and remnant polarizations of the grain orientated thick film were 37.3 and 14.4 μCcm 2, respectively. The temperature dependence of the dielectric constant and loss tangent were also evaluated. The Curie temperature of the thick film shifted to a high temperature as compared to that of its randomly orientated counterpart. This could be attributed to the large grain size of the grain oriented thick film. The piezoelectric properties of the thick film were characterized by the relationship of the unipolar strain and applied electric field. The piezoelectric constant d33* of the grain oriented thick film was 154 pm/V, which was higher than that of a randomly oriented film (d33*=100pmV) by more than 50%. © 2010 Elsevier Ltd. All rights reserved.
KW - A. Ferroelectrics
KW - D. Dielectric response
KW - D. Piezoelectricity
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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-78650516833&origin=recordpage
U2 - 10.1016/j.ssc.2010.11.011
DO - 10.1016/j.ssc.2010.11.011
M3 - RGC 21 - Publication in refereed journal
SN - 0038-1098
VL - 151
SP - 120
EP - 122
JO - Solid State Communications
JF - Solid State Communications
IS - 2
ER -