Fabrication of GaNxAs1-x quantum structures by focused ion beam patterning

K. Alberi; A. Minor; M. A. Scarpulla; S. J. Chung; D. E. Mars; K. M. Yu; W. Walukiewicz; O. D. Dubon

doi:10.1063/1.1994074

Fabrication of GaN_xAs_1-x quantum structures by focused ion beam patterning

K. Alberi
, A. Minor
, M. A. Scarpulla
, S. J. Chung
, D. E. Mars
, K. M. Yu
, W. Walukiewicz
, O. D. Dubon

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

A novel approach to the fabrication of GaN_xAs_1-x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice of an MBE-grown GaN^xAs^1-x film by amorphization through ion implantation followed by regrowth upon rapid thermal annealing (RTA). Amorphization may be achieved with a focused ion beam (FIB), which is used to implant Ga ions in patterned lines such that annealing produces GaAs regions within a GaN_xAs_1-x film. The profiles of these amorphized lines are dependent upon the dose implanted, and the film reaches a damage threshold during RTA due to excess Ga. By altering the FIB implantation pattern, quantum dots or wires may be fabricated. © 2005 American Institute of Physics.

Original language	English
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27th International Conference on the Physics of Semiconductors
Editors	José Menéndez, Chris G. Van de Walle
Publisher	American Institute of Physics
Pages	223-224
ISBN (Print)	0735402574, 9780735402577
DOIs	https://doi.org/10.1063/1.1994074
Publication status	Published - 30 Jun 2005
Externally published	Yes
Event	27th International Conference on the Physics of Semiconductors (ICPS 27) - Flagstaff, AZ, United States Duration: 26 Jul 2004 → 30 Jul 2004

Publication series

Name	AIP Conference Proceedings
Volume	772
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	27th International Conference on the Physics of Semiconductors (ICPS 27)
Place	United States
City	Flagstaff, AZ
Period	26/07/04 → 30/07/04

Access Output

10.1063/1.1994074

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

Alberi, K., Minor, A., Scarpulla, M. A., Chung, S. J., Mars, D. E., Yu, K. M., Walukiewicz, W., & Dubon, O. D. (2005). Fabrication of GaN_xAs_1-x quantum structures by focused ion beam patterning. In J. Menéndez, & C. G. Van de Walle (Eds.), PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors (pp. 223-224). (AIP Conference Proceedings; Vol. 772). American Institute of Physics. https://doi.org/10.1063/1.1994074

@inproceedings{4422313a6a61418389c0488687925677,

title = "Fabrication of GaNxAs1-x quantum structures by focused ion beam patterning",

abstract = "A novel approach to the fabrication of GaNxAs1-x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice of an MBE-grown GaNxAs1-x film by amorphization through ion implantation followed by regrowth upon rapid thermal annealing (RTA). Amorphization may be achieved with a focused ion beam (FIB), which is used to implant Ga ions in patterned lines such that annealing produces GaAs regions within a GaNxAs1-x film. The profiles of these amorphized lines are dependent upon the dose implanted, and the film reaches a damage threshold during RTA due to excess Ga. By altering the FIB implantation pattern, quantum dots or wires may be fabricated. {\textcopyright} 2005 American Institute of Physics.",

author = "K. Alberi and A. Minor and Scarpulla, \{M. A.\} and Chung, \{S. J.\} and Mars, \{D. E.\} and Yu, \{K. M.\} and W. Walukiewicz and Dubon, \{O. D.\}",

year = "2005",

month = jun,

day = "30",

doi = "10.1063/1.1994074",

language = "English",

isbn = "0735402574",

series = "AIP Conference Proceedings",

publisher = "American Institute of Physics",

pages = "223--224",

editor = "Jos{\'e} Men{\'e}ndez and \{Van de Walle\}, \{Chris G.\}",

booktitle = "PHYSICS OF SEMICONDUCTORS",

address = "United States",

note = "27th International Conference on the Physics of Semiconductors (ICPS 27) ; Conference date: 26-07-2004 Through 30-07-2004",

}

Alberi, K, Minor, A, Scarpulla, MA, Chung, SJ, Mars, DE, Yu, KM, Walukiewicz, W & Dubon, OD 2005, Fabrication of GaN_xAs_1-x quantum structures by focused ion beam patterning. in J Menéndez & CG Van de Walle (eds), PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors. AIP Conference Proceedings, vol. 772, American Institute of Physics, pp. 223-224, 27th International Conference on the Physics of Semiconductors (ICPS 27), Flagstaff, AZ, United States, 26/07/04. https://doi.org/10.1063/1.1994074

Fabrication of GaN_xAs_1-x quantum structures by focused ion beam patterning. / Alberi, K.; Minor, A.; Scarpulla, M. A. et al.
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors. ed. / José Menéndez; Chris G. Van de Walle. American Institute of Physics, 2005. p. 223-224 (AIP Conference Proceedings; Vol. 772).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Fabrication of GaNxAs1-x quantum structures by focused ion beam patterning

AU - Alberi, K.

AU - Minor, A.

AU - Scarpulla, M. A.

AU - Chung, S. J.

AU - Mars, D. E.

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Dubon, O. D.

PY - 2005/6/30

Y1 - 2005/6/30

N2 - A novel approach to the fabrication of GaNxAs1-x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice of an MBE-grown GaNxAs1-x film by amorphization through ion implantation followed by regrowth upon rapid thermal annealing (RTA). Amorphization may be achieved with a focused ion beam (FIB), which is used to implant Ga ions in patterned lines such that annealing produces GaAs regions within a GaNxAs1-x film. The profiles of these amorphized lines are dependent upon the dose implanted, and the film reaches a damage threshold during RTA due to excess Ga. By altering the FIB implantation pattern, quantum dots or wires may be fabricated. © 2005 American Institute of Physics.

AB - A novel approach to the fabrication of GaNxAs1-x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice of an MBE-grown GaNxAs1-x film by amorphization through ion implantation followed by regrowth upon rapid thermal annealing (RTA). Amorphization may be achieved with a focused ion beam (FIB), which is used to implant Ga ions in patterned lines such that annealing produces GaAs regions within a GaNxAs1-x film. The profiles of these amorphized lines are dependent upon the dose implanted, and the film reaches a damage threshold during RTA due to excess Ga. By altering the FIB implantation pattern, quantum dots or wires may be fabricated. © 2005 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/33749497939

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-33749497939&origin=recordpage

U2 - 10.1063/1.1994074

DO - 10.1063/1.1994074

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0735402574

SN - 9780735402577

T3 - AIP Conference Proceedings

SP - 223

EP - 224

BT - PHYSICS OF SEMICONDUCTORS

A2 - Menéndez, José

A2 - Van de Walle, Chris G.

PB - American Institute of Physics

T2 - 27th International Conference on the Physics of Semiconductors (ICPS 27)

Y2 - 26 July 2004 through 30 July 2004

ER -

Alberi K, Minor A, Scarpulla MA, Chung SJ, Mars DE, Yu KM et al. Fabrication of GaN_xAs_1-x quantum structures by focused ion beam patterning. In Menéndez J, Van de Walle CG, editors, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors. American Institute of Physics. 2005. p. 223-224. (AIP Conference Proceedings). doi: 10.1063/1.1994074