Fabrication of ferromagnetic (Ga,Mn)As by ion irradiation

C. H. Chen; H. Niu; H. H. Hsieh; C. Y. Cheng; D. C. Yan; C. C. Chi; J. J. Kai; S. C. Wu

doi:10.1016/j.jmmm.2008.10.042

Fabrication of ferromagnetic (Ga,Mn)As by ion irradiation

C. H. Chen
, H. Niu
, H. H. Hsieh
, C. Y. Cheng
, D. C. Yan
, C. C. Chi
, J. J. Kai
, S. C. Wu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

12 Citations (Scopus)

Abstract

Using Mn⁺ implantation following ion beam-induced epitaxial crystallization (IBIEC) annealing, high Curie temperature ferromagnetic (Ga,Mn)As thin film was fabricated. The crystalline quality of the Mn⁺ implanted layer was identified by X-ray diffraction (XRD) and transmission electron microscopy (TEM). A clear ferromagnetic transition at T_c 253 K was observed by magnetization vs. temperature measurement. We infer that IBIEC treatment is a useful method not only for the low-temperature annealing of (Ga,Mn)As thin films but also for other dilute magnetic semiconductor (DMS) samples. © 2008 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	1130-1132
Journal	Journal of Magnetism and Magnetic Materials
Volume	321
Issue number	9
DOIs	https://doi.org/10.1016/j.jmmm.2008.10.042
Publication status	Published - May 2009
Externally published	Yes

Research Keywords

(Ga
Magnetic materials
Mn)As
Recrystallization
Solid-phase epitaxy

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10.1016/j.jmmm.2008.10.042

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@article{3865d2d30e14459d8b330f3c2b2b7d42,

title = "Fabrication of ferromagnetic (Ga,Mn)As by ion irradiation",

abstract = "Using Mn+ implantation following ion beam-induced epitaxial crystallization (IBIEC) annealing, high Curie temperature ferromagnetic (Ga,Mn)As thin film was fabricated. The crystalline quality of the Mn+ implanted layer was identified by X-ray diffraction (XRD) and transmission electron microscopy (TEM). A clear ferromagnetic transition at Tc 253 K was observed by magnetization vs. temperature measurement. We infer that IBIEC treatment is a useful method not only for the low-temperature annealing of (Ga,Mn)As thin films but also for other dilute magnetic semiconductor (DMS) samples. {\textcopyright} 2008 Elsevier B.V. All rights reserved.",

keywords = "(Ga, Magnetic materials, Mn)As, Recrystallization, Solid-phase epitaxy",

author = "Chen, \{C. H.\} and H. Niu and Hsieh, \{H. H.\} and Cheng, \{C. Y.\} and Yan, \{D. C.\} and Chi, \{C. C.\} and Kai, \{J. J.\} and Wu, \{S. C.\}",

year = "2009",

month = may,

doi = "10.1016/j.jmmm.2008.10.042",

language = "English",

volume = "321",

pages = "1130--1132",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier B.V.",

number = "9",

}

TY - JOUR

T1 - Fabrication of ferromagnetic (Ga,Mn)As by ion irradiation

AU - Chen, C. H.

AU - Niu, H.

AU - Hsieh, H. H.

AU - Cheng, C. Y.

AU - Yan, D. C.

AU - Chi, C. C.

AU - Kai, J. J.

AU - Wu, S. C.

PY - 2009/5

Y1 - 2009/5

N2 - Using Mn+ implantation following ion beam-induced epitaxial crystallization (IBIEC) annealing, high Curie temperature ferromagnetic (Ga,Mn)As thin film was fabricated. The crystalline quality of the Mn+ implanted layer was identified by X-ray diffraction (XRD) and transmission electron microscopy (TEM). A clear ferromagnetic transition at Tc 253 K was observed by magnetization vs. temperature measurement. We infer that IBIEC treatment is a useful method not only for the low-temperature annealing of (Ga,Mn)As thin films but also for other dilute magnetic semiconductor (DMS) samples. © 2008 Elsevier B.V. All rights reserved.

AB - Using Mn+ implantation following ion beam-induced epitaxial crystallization (IBIEC) annealing, high Curie temperature ferromagnetic (Ga,Mn)As thin film was fabricated. The crystalline quality of the Mn+ implanted layer was identified by X-ray diffraction (XRD) and transmission electron microscopy (TEM). A clear ferromagnetic transition at Tc 253 K was observed by magnetization vs. temperature measurement. We infer that IBIEC treatment is a useful method not only for the low-temperature annealing of (Ga,Mn)As thin films but also for other dilute magnetic semiconductor (DMS) samples. © 2008 Elsevier B.V. All rights reserved.

KW - (Ga

KW - Magnetic materials

KW - Mn)As

KW - Recrystallization

KW - Solid-phase epitaxy

UR - https://www.scopus.com/pages/publications/61849096716

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-61849096716&origin=recordpage

U2 - 10.1016/j.jmmm.2008.10.042

DO - 10.1016/j.jmmm.2008.10.042

M3 - RGC 21 - Publication in refereed journal

SN - 0304-8853

VL - 321

SP - 1130

EP - 1132

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 9

ER -

Fabrication of ferromagnetic (Ga,Mn)As by ion irradiation

Abstract

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