Fabrication of ferromagnetic (Ga,Mn)As by ion irradiation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

10 Scopus Citations
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Author(s)

  • C. H. Chen
  • H. Niu
  • H. H. Hsieh
  • C. Y. Cheng
  • D. C. Yan
  • C. C. Chi
  • S. C. Wu

Detail(s)

Original languageEnglish
Pages (from-to)1130-1132
Journal / PublicationJournal of Magnetism and Magnetic Materials
Volume321
Issue number9
Publication statusPublished - May 2009
Externally publishedYes

Abstract

Using Mn+ implantation following ion beam-induced epitaxial crystallization (IBIEC) annealing, high Curie temperature ferromagnetic (Ga,Mn)As thin film was fabricated. The crystalline quality of the Mn+ implanted layer was identified by X-ray diffraction (XRD) and transmission electron microscopy (TEM). A clear ferromagnetic transition at Tc 253 K was observed by magnetization vs. temperature measurement. We infer that IBIEC treatment is a useful method not only for the low-temperature annealing of (Ga,Mn)As thin films but also for other dilute magnetic semiconductor (DMS) samples. © 2008 Elsevier B.V. All rights reserved.

Research Area(s)

  • (Ga, Magnetic materials, Mn)As, Recrystallization, Solid-phase epitaxy

Citation Format(s)

Fabrication of ferromagnetic (Ga,Mn)As by ion irradiation. / Chen, C. H.; Niu, H.; Hsieh, H. H.; Cheng, C. Y.; Yan, D. C.; Chi, C. C.; Kai, J. J.; Wu, S. C.

In: Journal of Magnetism and Magnetic Materials, Vol. 321, No. 9, 05.2009, p. 1130-1132.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal