Fabrication of ferromagnetic (Ga,Mn)As by ion irradiation

C. H. Chen; H. Niu; H. H. Hsieh; C. Y. Cheng; D. C. Yan; C. C. Chi; J. J. Kai; S. C. Wu

doi:10.1016/j.jmmm.2008.10.042

Fabrication of ferromagnetic (Ga,Mn)As by ion irradiation

C. H. Chen, H. Niu, H. H. Hsieh, C. Y. Cheng, D. C. Yan, C. C. Chi, J. J. Kai, S. C. Wu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

12 Citations (Scopus)

Abstract

Using Mn⁺ implantation following ion beam-induced epitaxial crystallization (IBIEC) annealing, high Curie temperature ferromagnetic (Ga,Mn)As thin film was fabricated. The crystalline quality of the Mn⁺ implanted layer was identified by X-ray diffraction (XRD) and transmission electron microscopy (TEM). A clear ferromagnetic transition at T_c 253 K was observed by magnetization vs. temperature measurement. We infer that IBIEC treatment is a useful method not only for the low-temperature annealing of (Ga,Mn)As thin films but also for other dilute magnetic semiconductor (DMS) samples. © 2008 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	1130-1132
Journal	Journal of Magnetism and Magnetic Materials
Volume	321
Issue number	9
DOIs	https://doi.org/10.1016/j.jmmm.2008.10.042
Publication status	Published - May 2009
Externally published	Yes

Research Keywords

(Ga
Magnetic materials
Mn)As
Recrystallization
Solid-phase epitaxy

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10.1016/j.jmmm.2008.10.042

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@article{3865d2d30e14459d8b330f3c2b2b7d42,

title = "Fabrication of ferromagnetic (Ga,Mn)As by ion irradiation",

abstract = "Using Mn+ implantation following ion beam-induced epitaxial crystallization (IBIEC) annealing, high Curie temperature ferromagnetic (Ga,Mn)As thin film was fabricated. The crystalline quality of the Mn+ implanted layer was identified by X-ray diffraction (XRD) and transmission electron microscopy (TEM). A clear ferromagnetic transition at Tc 253 K was observed by magnetization vs. temperature measurement. We infer that IBIEC treatment is a useful method not only for the low-temperature annealing of (Ga,Mn)As thin films but also for other dilute magnetic semiconductor (DMS) samples. {\textcopyright} 2008 Elsevier B.V. All rights reserved.",

keywords = "(Ga, Magnetic materials, Mn)As, Recrystallization, Solid-phase epitaxy",

author = "Chen, {C. H.} and H. Niu and Hsieh, {H. H.} and Cheng, {C. Y.} and Yan, {D. C.} and Chi, {C. C.} and Kai, {J. J.} and Wu, {S. C.}",

year = "2009",

month = may,

doi = "10.1016/j.jmmm.2008.10.042",

language = "English",

volume = "321",

pages = "1130--1132",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier B.V.",

number = "9",

}

TY - JOUR

T1 - Fabrication of ferromagnetic (Ga,Mn)As by ion irradiation

AU - Chen, C. H.

AU - Niu, H.

AU - Hsieh, H. H.

AU - Cheng, C. Y.

AU - Yan, D. C.

AU - Chi, C. C.

AU - Kai, J. J.

AU - Wu, S. C.

PY - 2009/5

Y1 - 2009/5

N2 - Using Mn+ implantation following ion beam-induced epitaxial crystallization (IBIEC) annealing, high Curie temperature ferromagnetic (Ga,Mn)As thin film was fabricated. The crystalline quality of the Mn+ implanted layer was identified by X-ray diffraction (XRD) and transmission electron microscopy (TEM). A clear ferromagnetic transition at Tc 253 K was observed by magnetization vs. temperature measurement. We infer that IBIEC treatment is a useful method not only for the low-temperature annealing of (Ga,Mn)As thin films but also for other dilute magnetic semiconductor (DMS) samples. © 2008 Elsevier B.V. All rights reserved.

AB - Using Mn+ implantation following ion beam-induced epitaxial crystallization (IBIEC) annealing, high Curie temperature ferromagnetic (Ga,Mn)As thin film was fabricated. The crystalline quality of the Mn+ implanted layer was identified by X-ray diffraction (XRD) and transmission electron microscopy (TEM). A clear ferromagnetic transition at Tc 253 K was observed by magnetization vs. temperature measurement. We infer that IBIEC treatment is a useful method not only for the low-temperature annealing of (Ga,Mn)As thin films but also for other dilute magnetic semiconductor (DMS) samples. © 2008 Elsevier B.V. All rights reserved.

KW - (Ga

KW - Magnetic materials

KW - Mn)As

KW - Recrystallization

KW - Solid-phase epitaxy

UR - http://www.scopus.com/inward/record.url?scp=61849096716&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-61849096716&origin=recordpage

U2 - 10.1016/j.jmmm.2008.10.042

DO - 10.1016/j.jmmm.2008.10.042

M3 - RGC 21 - Publication in refereed journal

SN - 0304-8853

VL - 321

SP - 1130

EP - 1132

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 9

ER -

Fabrication of ferromagnetic (Ga,Mn)As by ion irradiation

Abstract

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