Fabrication of epitaxial Cu3Ge on sapphire with controlled crystallinity and planar defects

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

3 Scopus Citations
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Author(s)

  • F. Wu
  • J.K. Zheng
  • W. Cai
  • N. Yao
  • J. Narayan

Detail(s)

Original languageEnglish
Pages (from-to)238-243
Journal / PublicationJournal of Alloys and Compounds
Volume641
Online published18 Apr 2015
Publication statusPublished - 25 Aug 2015
Externally publishedYes

Abstract

In this paper, we report the growth of epitaxial Cu3Ge thin films on c-plane sapphire substrate through domain matching epitaxy. Systematic study on the crystallinity of Cu3Ge thin films is carried out to correlate epitaxial characteristics with substrate lattice misfit. The crystallinity and epitaxy of the as-grown Cu3Ge thin films are improved considerably by controlling the parameters of pulsed laser deposition. The epitaxial characteristics and formation of twins in Cu3Ge are investigated and a mechanism of twin formation in Cu3Ge ε1-phase is discussed. The present study proves that the crystallinity and defect structure of Cu3Ge thin film can be controlled by adjusting the deposition parameters. It serves as a fundamental research for future applications of epitaxial Cu3Ge as metallization material in semiconductor industry.

Research Area(s)

  • Cu3Ge thin film, Pulsed laser deposition, Sapphire, Semiconductor metallization, Twin

Citation Format(s)