Fabrication of a strain sensor for bone implant failure detection based on piezoresistive doped nanocrystalline silicon

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

27 Scopus Citations
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Author(s)

  • P. Alpuim
  • S. A. Filonovich
  • C. M. Costa
  • P. F. Rocha
  • M. I. Vasilevskiy
  • And 5 others
  • S. Lanceros-Mendez
  • C. Frias
  • A. Torres Marques
  • R. Soares
  • C. Costa

Detail(s)

Original languageEnglish
Pages (from-to)2585-2589
Journal / PublicationJournal of Non-Crystalline Solids
Volume354
Issue number19-25
Publication statusPublished - 1 May 2008
Externally publishedYes

Abstract

One common complication following total-hip-replacement arthroplasty - one of the most performed elective surgical procedures - is the loosening of the prosthetic stem and cup, responsible for more than 80% of non-successes. A combination of piezoelectric and piezoresistive materials in a sensing device for dynamical and quasi-static analysis of the implant internal environment is envisaged by the authors. In this paper, thin-film piezoresistive millimeter-long strain sensors fabricated on flexible plastic substrates using n- and p-type hydrogenated nanocrystalline silicon films with gauge factor GF ∼ -30 and +20, respectively, are reported. A maximal value of GF = -43 is theoretically predicted for isotropic n-type multicrystalline Si. A sensor consists of an array of piezoresistors, each connected to a Wheatstone bridge-type external circuit, and to the control electronics. A sensitivity of 30 mV/μm was achieved in sensors bearing both longitudinal and transverse orientations of the resistors relative to the strain direction. Used as a shape sensor the device was able to map the contour of the hip implant. Cell growth tests show that osteoblasts grow faster on P-doped nc-Si:H thin films than on the control sample. Genotoxicity tests show that cell DNA is preserved if cultured in contact with n-type nanocrystalline silicon. © 2008 Elsevier B.V. All rights reserved.

Research Area(s)

  • 73.50.Dn, 73.63.Bd, 84.37.+q, 87.19.St, Chemical vapor deposition, Conductivity, Microcrystallinity, Nanocrystals, Sensors, Silicon

Citation Format(s)

Fabrication of a strain sensor for bone implant failure detection based on piezoresistive doped nanocrystalline silicon. / Alpuim, P.; Filonovich, S. A.; Costa, C. M.; Rocha, P. F.; Vasilevskiy, M. I.; Lanceros-Mendez, S.; Frias, C.; Marques, A. Torres; Soares, R.; Costa, C.

In: Journal of Non-Crystalline Solids, Vol. 354, No. 19-25, 01.05.2008, p. 2585-2589.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review