Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation

Zengfeng Di; Miao Zhang; Weili Liu; Suhua Luo; Zhitang Song; Chenglu Lin; Anping Huang; Paul K. Chu

doi:10.1116/1.1978900

Author(s)

Zengfeng Di
Miao Zhang
Weili Liu
Suhua Luo
Zhitang Song
Chenglu Lin
Anping Huang

Detail(s)

Original language	English
Pages (from-to)	1637-1640
Journal / Publication	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	4
Publication status	Published - 2005

Link(s)

DOI	DOI https://doi.org/10.1116/1.1978900 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-31144434526&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(34487180-b83d-4c5d-a14a-3b2ce21d2e6b).html

Abstract

We have developed a modified technique to fabricate silicon-germanium on insulator (SGOI) starting with a sandwiched structure of SiSiGeSi. By means of oxidation and annealing, relaxed SiGe-on-insulator (SGOI) with a Ge fraction of 34% has been produced. Our results indicate that oxidation of the silicon cap suppresses Ge loss at the initial stage of the SiGe oxidation and the subsequent annealing process homogenizes the Ge fraction and also reduces Ge enrichment under the oxide. It is found that the strain in the SiGe layer is almost fully relaxed at high oxidation temperature (∼1150 °C) without generating any dislocations and crosshatch patterns that are commonly observed on the surface of a relaxed or partially relaxed SiGe layer on bulk Si substrate. © 2005 American Vacuum Society.

Citation Format(s)

[ RIS ] [ BibTeX ]

Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation. / Di, Zengfeng; Zhang, Miao; Liu, Weili et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 4, 2005, p. 1637-1640.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Di, Z, Zhang, M, Liu, W, Luo, S, Song, Z, Lin, C, Huang, A & Chu, PK 2005, 'Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 23, no. 4, pp. 1637-1640. https://doi.org/10.1116/1.1978900

Di, Z., Zhang, M., Liu, W., Luo, S., Song, Z., Lin, C., Huang, A., & Chu, P. K. (2005). Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 23(4), 1637-1640. https://doi.org/10.1116/1.1978900

Di Z, Zhang M, Liu W, Luo S, Song Z, Lin C et al. Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2005;23(4):1637-1640. doi: 10.1116/1.1978900

Di, Zengfeng ; Zhang, Miao ; Liu, Weili et al. / Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2005 ; Vol. 23, No. 4. pp. 1637-1640.