Fabrication and field emission property of a Si nanotip array

G. S. Huang; X. L. Wu; Y. C. Cheng; X. F. Li; S. H. Luo; T. Feng; Paul K. Chu

doi:10.1088/0957-4484/17/22/008

Fabrication and field emission property of a Si nanotip array

G. S. Huang, X. L. Wu, Y. C. Cheng, X. F. Li, S. H. Luo, T. Feng, Paul K. Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

26 Citations (Scopus)

Abstract

Using a Si-based porous anodic alumina membrane as a mask, we demonstrate a way to pattern Si surface. After removing the SiO₂ nanoislands formed during anodization of the Al/Si interface, we obtain a Si nanotip array on the surface of a Si wafer. This array shows an excellent field emission property with a low turn-on field of 8.5Vνm^-1. The Fowler-Nordheim plot obtained is linearly dependent, indicating that the emission current arises from the quantum tunnelling effect. The Si nanotip array can be expected to have important applications in nanoelectronic devices. © IOP Publishing Ltd.

Original language	English
Article number	8
Pages (from-to)	5573-5576
Journal	Nanotechnology
Volume	17
Issue number	22
DOIs	https://doi.org/10.1088/0957-4484/17/22/008
Publication status	Published - 28 Nov 2006

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title = "Fabrication and field emission property of a Si nanotip array",

abstract = "Using a Si-based porous anodic alumina membrane as a mask, we demonstrate a way to pattern Si surface. After removing the SiO2 nanoislands formed during anodization of the Al/Si interface, we obtain a Si nanotip array on the surface of a Si wafer. This array shows an excellent field emission property with a low turn-on field of 8.5Vνm-1. The Fowler-Nordheim plot obtained is linearly dependent, indicating that the emission current arises from the quantum tunnelling effect. The Si nanotip array can be expected to have important applications in nanoelectronic devices. {\textcopyright} IOP Publishing Ltd.",

author = "Huang, {G. S.} and Wu, {X. L.} and Cheng, {Y. C.} and Li, {X. F.} and Luo, {S. H.} and T. Feng and Chu, {Paul K.}",

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T1 - Fabrication and field emission property of a Si nanotip array

AU - Huang, G. S.

AU - Wu, X. L.

AU - Cheng, Y. C.

AU - Li, X. F.

AU - Luo, S. H.

AU - Feng, T.

AU - Chu, Paul K.

PY - 2006/11/28

Y1 - 2006/11/28

N2 - Using a Si-based porous anodic alumina membrane as a mask, we demonstrate a way to pattern Si surface. After removing the SiO2 nanoislands formed during anodization of the Al/Si interface, we obtain a Si nanotip array on the surface of a Si wafer. This array shows an excellent field emission property with a low turn-on field of 8.5Vνm-1. The Fowler-Nordheim plot obtained is linearly dependent, indicating that the emission current arises from the quantum tunnelling effect. The Si nanotip array can be expected to have important applications in nanoelectronic devices. © IOP Publishing Ltd.

AB - Using a Si-based porous anodic alumina membrane as a mask, we demonstrate a way to pattern Si surface. After removing the SiO2 nanoislands formed during anodization of the Al/Si interface, we obtain a Si nanotip array on the surface of a Si wafer. This array shows an excellent field emission property with a low turn-on field of 8.5Vνm-1. The Fowler-Nordheim plot obtained is linearly dependent, indicating that the emission current arises from the quantum tunnelling effect. The Si nanotip array can be expected to have important applications in nanoelectronic devices. © IOP Publishing Ltd.

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U2 - 10.1088/0957-4484/17/22/008

DO - 10.1088/0957-4484/17/22/008

M3 - RGC 21 - Publication in refereed journal

SN - 0957-4484

VL - 17

SP - 5573

EP - 5576

JO - Nanotechnology

JF - Nanotechnology

IS - 22

M1 - 8

ER -

Fabrication and field emission property of a Si nanotip array

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