Fabrication and enhanced rectifying performance of Zn1-xCo xO nanowall vertically growing on Si wafer

Guoxing Zhu; Yuanjun Liu; Chi Zhang; Zonglong Zhu; Zheng Xu

doi:10.1246/cl.2010.994

Fabrication and enhanced rectifying performance of Zn_1-xCo _xO nanowall vertically growing on Si wafer

Guoxing Zhu
, Yuanjun Liu
, Chi Zhang
, Zonglong Zhu
, Zheng Xu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

11 Citations (Scopus)

Abstract

Mesocrystalline ZnO and Co-doped ZnO nanowall/p-Si heterojunctions are prepared by a chemical precursor route, which exhibits a rectifying behavior with a lower turn-on voltage tuned by Co²⁺ dopant concentration. © 2010 The Chemical Society of Japan.

Original language	English
Pages (from-to)	994-995
Journal	Chemistry Letters
Volume	39
Issue number	9
DOIs	https://doi.org/10.1246/cl.2010.994
Publication status	Published - 2010
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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Cite this

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title = "Fabrication and enhanced rectifying performance of Zn1-xCo xO nanowall vertically growing on Si wafer",

abstract = "Mesocrystalline ZnO and Co-doped ZnO nanowall/p-Si heterojunctions are prepared by a chemical precursor route, which exhibits a rectifying behavior with a lower turn-on voltage tuned by Co2+ dopant concentration. {\textcopyright} 2010 The Chemical Society of Japan.",

author = "Guoxing Zhu and Yuanjun Liu and Chi Zhang and Zonglong Zhu and Zheng Xu",

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doi = "10.1246/cl.2010.994",

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pages = "994--995",

journal = "Chemistry Letters",

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TY - JOUR

T1 - Fabrication and enhanced rectifying performance of Zn1-xCo xO nanowall vertically growing on Si wafer

AU - Zhu, Guoxing

AU - Liu, Yuanjun

AU - Zhang, Chi

AU - Zhu, Zonglong

AU - Xu, Zheng

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2010

Y1 - 2010

N2 - Mesocrystalline ZnO and Co-doped ZnO nanowall/p-Si heterojunctions are prepared by a chemical precursor route, which exhibits a rectifying behavior with a lower turn-on voltage tuned by Co2+ dopant concentration. © 2010 The Chemical Society of Japan.

AB - Mesocrystalline ZnO and Co-doped ZnO nanowall/p-Si heterojunctions are prepared by a chemical precursor route, which exhibits a rectifying behavior with a lower turn-on voltage tuned by Co2+ dopant concentration. © 2010 The Chemical Society of Japan.

UR - https://www.scopus.com/pages/publications/77956137997

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-77956137997&origin=recordpage

U2 - 10.1246/cl.2010.994

DO - 10.1246/cl.2010.994

M3 - RGC 21 - Publication in refereed journal

SN - 0366-7022

VL - 39

SP - 994

EP - 995

JO - Chemistry Letters

JF - Chemistry Letters

IS - 9

ER -