Fabrication and enhanced rectifying performance of Zn1-xCo xO nanowall vertically growing on Si wafer

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

10 Scopus Citations
View graph of relations

Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)994-995
Journal / PublicationChemistry Letters
Volume39
Issue number9
Publication statusPublished - 2010
Externally publishedYes

Abstract

Mesocrystalline ZnO and Co-doped ZnO nanowall/p-Si heterojunctions are prepared by a chemical precursor route, which exhibits a rectifying behavior with a lower turn-on voltage tuned by Co2+ dopant concentration. © 2010 The Chemical Society of Japan.

Bibliographic Note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to lbscholars@cityu.edu.hk.

Citation Format(s)

Fabrication and enhanced rectifying performance of Zn1-xCo xO nanowall vertically growing on Si wafer. / Zhu, Guoxing; Liu, Yuanjun; Zhang, Chi et al.
In: Chemistry Letters, Vol. 39, No. 9, 2010, p. 994-995.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review