@inproceedings{9dd19adc4c4d406db2fc02a438cf940d,
title = "Fabrication and Characterization of a Sensitivity Multi-Annular Backscattered Electron Detector for Desktop SEM",
abstract = "A sensitivity silicon p-n diodes for detecting backscattering electrons in SEM was proposed and fabricated. The multi-annular configuration enables to provide higher sensitivity of Z-contrast and better surface topography contrast of BSE image. In this study, the multi-annular backscattered electron detector (BSED) can provide enhancement of surface topography contrast and image contrast with 105% and 42% as compared with commercial BSED which with the multi-fan configuration. We also designed a high sensitivity to low energy electrons detector which with lateral p-n junctions and Al metal grids.",
keywords = "backscattered electron detector, Desktop SEM, SEM",
author = "Wei-Ruei Lin and Yun-Ju Chuang and Chih-Hao Lee and Fan-Gang Tseng and Fu-Rong Chen",
year = "2018",
month = may,
doi = "10.1109/ISNE.2018.8394642",
language = "English",
series = "International Symposium on Next-Generation Electronics (ISNE)",
publisher = "IEEE",
booktitle = "2018 7th International Symposium on Next-Generation Electronics (ISNE)",
address = "United States",
note = "7th International Symposium on Next-Generation Electronics, ISNE 2018 ; Conference date: 07-05-2018 Through 09-05-2018",
}