Fabrication and Characterization of a High-Performance Multi-Annular Backscattered Electron Detector for Desktop SEM

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

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Author(s)

  • Wei-Ruei Lin
  • Yun-Ju Chuang
  • Chih-Hao Lee
  • Fan-Gang Tseng
  • Fu-Rong Chen

Detail(s)

Original languageEnglish
Article number3093
Journal / PublicationSensors (Switzerland)
Volume18
Issue number9
Early online date14 Sep 2018
Publication statusPublished - Sep 2018

Link(s)

Abstract

Scanning electron microscopy has been developed for topographic analysis at the nanometer scale. Herein, we present a silicon p-n diode with multi-annular configuration to detect backscattering electrons (BSE) in a homemade desktop scanning electron microscope (SEM). The multi-annular configuration enables the enhancement of the topography contrast of 82.11 nA/µm as compared with the commercial multi-fan-shaped BSE detector of 40.08 nA/µm. Additionally, we integrated it with lateral p-n junction processing and aluminum grid structure to increase the sensitivity and efficiency of the multi-annular BSE detector that gives higher sensitivity of atomic number contrast and better surface topography contrast of BSE images for low-energy detection. The responsivity data also shows that MA-AL and MA p-n detectors have higher gain value than the MA detector does. The standard deviation of measurements is no higher than 1%. These results verify that MA p-n and MA-AL detectors are stable and can function well in SEM for low-energy applications. It is demonstrated that the multi-annular (MA) detectors are well suited for imaging in SEM systems.

Research Area(s)

  • Backscattered electron detector, Desktop scanning electron microscope, Surface topography

Citation Format(s)

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